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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

High-Pressure Synthesis of Silicon-Rich Chromium Silicides: MoSi2-Type CrSi2 and PdGa5-Type CrSi5 with a Si Network

http://hdl.handle.net/2237/0002013750
http://hdl.handle.net/2237/0002013750
a086c76a-bd6c-45c3-97b1-71984a47113f
名前 / ファイル ライセンス アクション
High-pressure_synthesis_of_silicon-rich_chromium_silicides_MoSi2-type_CrSi2_and_PdGa5-type_CrSi.pdf High-pressure_synthesis_of_silicon-rich_chromium_silicides_MoSi2-type_CrSi2_and_PdGa5-type_CrSi.pdf (12 MB)
 Download is available from 2026/10/13.
アイテムタイプ itemtype_ver1(1)
公開日 2025-12-19
タイトル
タイトル High-Pressure Synthesis of Silicon-Rich Chromium Silicides: MoSi2-Type CrSi2 and PdGa5-Type CrSi5 with a Si Network
言語 en
著者 Sasaki, Takuya

× Sasaki, Takuya

en Sasaki, Takuya

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Takano, Koichi

× Takano, Koichi

en Takano, Koichi

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Kitahara, Takumi

× Kitahara, Takumi

en Kitahara, Takumi

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Gaida, Nico Alexander

× Gaida, Nico Alexander

en Gaida, Nico Alexander

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Niwa, Ken

× Niwa, Ken

en Niwa, Ken

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Hasegawa, Masashi

× Hasegawa, Masashi

en Hasegawa, Masashi

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アクセス権
アクセス権 embargoed access
アクセス権URI http://purl.org/coar/access_right/c_f1cf
権利
権利情報 This document is the Accepted Manuscript version of a Published Work that appeared in final form in [INORGANIC CHEMISTRY], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [https://pubs.acs.org/articlesonrequest/AOR-PGAKH6GRIFE2MXP8A4YY].”
言語 en
内容記述
内容記述タイプ Abstract
内容記述 Two novel chromium silicides, MoSi2-type CrSi2 and PdGa5-type CrSi5, were successfully synthesized under high-pressure and high-temperature (HPHT) conditions at 12 GPa and 600 °C. The “missing” MoSi2-type CrSi2, which was theoretically predicted to be a stable phase of chromium disilicide, was experimentally obtained for the first time, and adopted a tetragonal I4/mmm structure with a = 3.09422(2) Å and c = 7.54051(5) Å. The crystal structure of MoSi2-type CrSi2 differs from that of ambient-pressure phase CrSi2-type CrSi2 in the stacking of close-packed layers. HPHT in situ XRD experiments suggest that the stacking transition in CrSi2 involves a diffusion-promoting liquid phase. PdGa5-type CrSi5, crystallizing in the I4/mcm structure with a = 5.99998(8) Å and c = 9.2363(2) Å, represents the most Si-rich compound among the reported transition-metal silicides. Its formation was confirmed by HPHT in situ XRD, and DFT calculations revealed that its enthalpy was lower than those of the other phases under high pressure. The structure contains covalently bonded Si–Si networks forming tunnel-like frameworks, reminiscent of clathrate architectures. These findings suggest the potential of exploring a novel class of silicon-rich transition-metal silicides and demonstrate that high-pressure synthesis is a powerful strategy for expanding the structural diversity of transition-metal silicides.
言語 en
出版者
出版者 ACS Publications
言語 en
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1021/acs.inorgchem.5c02349
収録物識別子
収録物識別子タイプ PISSN
書誌情報 en : INORGANIC CHEMISTRY

巻 64, 号 40, p. 19989-19997, 発行日 2025-10-13
ファイル公開日
日付 2026-10-13
日付タイプ Available
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