| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2025-12-22 |
| タイトル |
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タイトル |
Focused light birefringence for three-dimensional observation of dislocations in silicon carbide wafers |
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言語 |
en |
| 著者 |
Kato, Masashi
Sato, Hisaya
Kato, Tomohisa
Murata, Koichi
Harada, Shunta
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| アクセス権 |
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アクセス権 |
embargoed access |
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アクセス権URI |
http://purl.org/coar/access_right/c_f1cf |
| 権利 |
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|
権利情報 |
Copyright 2025 Author(s). Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (REVIEW OF SCIENTIFIC INSTRUMENTS. 96, 083901 (2025)) and may be found at (https://doi.org/10.1063/5.0184548). |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
We report a novel method known as focused light birefringence for the three-dimensional observation of dislocations in silicon carbide (SiC) wafers. Dislocations in SiC wafers can adversely affect device performance and production yield, which necessitates their characterization. The existing methods for observing dislocations have some limitations such as sample destruction and the need for sophisticated x-ray facilities. The proposed method utilizes birefringence observations with focused light, which enables the detection of three-dimensional dislocations in SiC substrates and epilayers using a continuous-wave laser and objective lens. The results of experiments showed the successful observation of contrasts representing stress fields around dislocations in freestanding SiC epilayers. In addition, the method allowed the detection of dislocations with conversion structures from basal-plane to threading-edge dislocations, as well as those with threading from the epilayer into the substrate in a 10 μm thick epilayer sample. Compared to other methods, the focused light birefringence method offers advantages such as non-destructiveness and applicability to both SiC substrates and epilayers. The proposed method is effective for the three-dimensional observation of dislocations in SiC wafers and makes it possible to better understand the effect of such dislocations on device performance. |
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言語 |
en |
| 出版者 |
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出版者 |
AIP Publishing |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| 出版タイプ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
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関連タイプ |
isVersionOf |
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|
識別子タイプ |
DOI |
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|
関連識別子 |
https://doi.org/10.1063/5.0184548 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0034-6748 |
| 書誌情報 |
en : REVIEW OF SCIENTIFIC INSTRUMENTS
巻 96,
号 8,
p. 083901,
発行日 2025-08-11
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| ファイル公開日 |
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日付 |
2026-08-11 |
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日付タイプ |
Available |
083901_1_5_0184548.pdf (12.2 MB)
