| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2025-12-22 |
| タイトル |
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|
タイトル |
Large area x-ray rocking curve mapping technique utilizing a wide beam of BL09 at SAGA Light Source |
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言語 |
en |
| 著者 |
Ishiji, Kotaro
Ishida, Shigeru
Kokubu, Shin-ichiro
Fujii, Takashi
Shiraishi, Yuji
Fukuda, Tsuguo
Seo, Keisuke
Harada, Shunta
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| アクセス権 |
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アクセス権 |
embargoed access |
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アクセス権URI |
http://purl.org/coar/access_right/c_f1cf |
| 権利 |
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|
権利情報 |
This is the Accepted Manuscript version of an article accepted for publication in [SEMICONDUCTOR SCIENCE AND TECHNOLOGY]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.1088/1361-6641/adf142] |
|
言語 |
en |
| 権利 |
|
|
権利情報 |
“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to” |
|
言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
A large-area x-ray rocking curve (LAXRC) mapping technique was developed by leveraging the wide beam capability of BL09 at the SAGA Light Source synchrotron facility. An x-ray imaging detector with a 50 × 50 mm2-receiving area and 50 μm/pixel-resolution was employed. The methodology, from data collection to the analysis of full width at half maximum (FWHM) and peak-position distributions, was presented, and then the LAXRC mapping measurements of 2 inch ScAlMgO4 and 6 inch SiC wafers were demonstrated. The FWHM value exhibited sensitivity to the residual lattice strain, and its distribution was ascertained to correlate with the dislocation distribution structure observed using x-ray topography. By contrast, the peak-position distribution, which visualizes lattice warpage, was insensitive to minor strain fields from dislocations but responded to the significant strain fields of macro defects. The results indicate that the LAXRC mapping technique is an efficient and powerful tool for assessing lattice strain and lattice warpage structures in the entire large wafers. |
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言語 |
en |
| 出版者 |
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出版者 |
IOP publishing |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| 出版タイプ |
|
|
出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連情報 |
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|
関連タイプ |
isVersionOf |
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|
識別子タイプ |
DOI |
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|
関連識別子 |
https://doi.org/10.1088/1361-6641/adf142 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0268-1242 |
| 書誌情報 |
en : SEMICONDUCTOR SCIENCE AND TECHNOLOGY
巻 40,
号 7,
p. 075012,
発行日 2025-07-25
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| ファイル公開日 |
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|
日付 |
2026-07-25 |
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日付タイプ |
Available |
Manuscript_revision_LAXRC_mapping.pdf (809 KB)
