{"created":"2021-03-01T06:28:59.626721+00:00","id":21333,"links":{},"metadata":{"_buckets":{"deposit":"3bf57985-c3e8-4c35-8553-f314d626642b"},"_deposit":{"id":"21333","owners":[],"pid":{"revision_id":0,"type":"depid","value":"21333"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00021333","sets":["673:674:675"]},"author_link":["61521","61522","61523","61524","61525","61526","61527","61528","61529","61530"],"item_10_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Thermally Assisted Switching on Magnetic Tunnel Junctions with TbFe Layer","subitem_alternative_title_language":"en"}]},"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"438","bibliographicPageEnd":"51","bibliographicPageStart":"47","bibliographicVolumeNumber":"110","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会技術研究報告. MR, 磁気記録","bibliographic_titleLang":"ja"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"希土類-遷移金属(RE-TM)膜をメモリー層とした垂直磁化型のTbFe/CoFeB/Al-O/[Co/Pd]_6磁気トンネル接合を作成し,その磁気抵抗(MR)特性および障壁へ印可した電流パルスにより発生するジュール熱を用いた熱アシスト磁化反転を確認した.Al-O層厚0.8 nmのMTJ素子(素子サイズ20μm x 20μm)では低バイアス(40mV)で面積抵抗6 kΩμm^2程度,MR比10%,TbFe層の保磁力4kOe程度が得られた.一方,高バイアス(350 mv)では,障壁への通電により発生するジュール熱によりTbFe層の保磁力が2kOe程度まで減少した.磁界中で電流パルスを印可後の抵抗値から,熱アシスト磁化反転に必要な電力密度の外部磁界依存性を測定した.磁化反転に必要な電力密度は,磁界の減少に伴い単調に増加し,100Oe程度の磁界では80μW/μm^2と見積もられた.これより,TbFe膜をメモリー層として用いたMTJ素子では低電力での熱アシスト磁化反転が可能であるという結論を得た.","subitem_description_language":"ja","subitem_description_type":"Abstract"},{"subitem_description":"We fabricated perpendicular magnetized magnetic tunnel junctions (MTJs) with a rare earth-transition metal (RE-TM) alloy whose stack is TbFe/CoFeB/Al-O/[Co/Pd]_6, and investigated their magneto-resistance (MR) property and magnetization switching assisted by the Joule heat due to a current pulse through the Al-O junction. The MTJ with Al-O thickness of 0.8 nm and areal size of 20μm x 20μm exhibited resistance area product RA of 6 kΩμm^2, MR ratio of 10%, and coercivity of TbFe layer of 4 kOe at a bias voltage of 40 mV. The coercivity of TbFe layer decreased down to 2 kOe at a bias voltage of 350 mV because of the Joule heat generated in the Al-O junction. From the MTJ resistance after the application of heating pulse, we measured the applied field dependence of the power density necessary for the thermally assisted magnetization switching. The power density was confirmed to increase with decreasing the applied field, and was estimated to be 80μW/μm^2 at the external field of 100 Oe. From this result, it is concluded that the MTJ with RE-TM alloy is effective for low power thermally assisted switching.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"URI","subitem_identifier_uri":"http://ci.nii.ac.jp/naid/110008688904/"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/23476"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"一般社団法人電子情報通信学会","subitem_publisher_language":"ja"}]},"item_10_relation_43":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://ci.nii.ac.jp/naid/110008688904/","subitem_relation_type_select":"URI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである","subitem_rights_language":"ja"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0913-5685","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"野田, 晃司","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"61521","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"藤澤, 佑樹","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"61522","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"加藤, 剛志","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"61523","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"岩田, 聡","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"61524","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"綱島, 滋","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"61525","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"NODA, Koji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"61526","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"FUJISAWA, Yuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"61527","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"KATO, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"61528","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"IWATA, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"61529","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"TSUNASHIMA, Shigeru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"61530","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"110008688904.pdf","filesize":[{"value":"701.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"110008688904.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/21333/files/110008688904.pdf"},"version_id":"aa3634f4-96a1-44fe-80b0-637a3b2fe06b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"熱アシスト磁化反転","subitem_subject_scheme":"Other"},{"subitem_subject":"MTJ","subitem_subject_scheme":"Other"},{"subitem_subject":"希土類-遷移金属","subitem_subject_scheme":"Other"},{"subitem_subject":"TbFe","subitem_subject_scheme":"Other"},{"subitem_subject":"Thermally assisted switching","subitem_subject_scheme":"Other"},{"subitem_subject":"RE-TM","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"TbFe層を用いた垂直磁化MTJの熱アシスト磁化反転","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"TbFe層を用いた垂直磁化MTJの熱アシスト磁化反転","subitem_title_language":"ja"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-02-18"},"publish_date":"2016-02-18","publish_status":"0","recid":"21333","relation_version_is_last":true,"title":["TbFe層を用いた垂直磁化MTJの熱アシスト磁化反転"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:52:58.145107+00:00"}