@article{oai:nagoya.repo.nii.ac.jp:00021335, author = {藤澤, 佑樹 and 吉川, 大貴 and 加藤, 剛志 and 岩田, 聡 and 綱島, 滋 and Fujisawa, Yuki and Yoshikawa, Daiki and Kato, Takeshi and Iwata, Satoshi and Tsunashima, Shigeru}, issue = {452}, journal = {電子情報通信学会技術研究報告. MR, 磁気記録}, month = {Mar}, note = {大きな垂直磁気異方性を有し,低キュリー温度のTbFeをメモリー層とした[Co/Pd]/MgO /TbFe垂直磁気トンネル接合を作成し,その磁気抵抗(MR)特性およびトンネル障壁へ電流パルスを印加することで発生するジュール熱による熱アシスト磁化反転を確認した.MgO 1.4nmの磁気トンネル接合素子では低バイアス(40mV)でMR比9%,面積抵抗342 Ωum^2程度の値が得られた.またTbFe層の室温での保磁力は1.5 kOe以上であるが,トンネル障壁にパルス幅100 msecの電流パルスを印加することで発生するジュール熱を利用し,100 Oeの磁界で磁化反転を観測した., Perpendicular magnetized [Co/Pd]/MgO / TbFe tunnel junctions whose memory layer, TbFe, exhibits large perpendicular anisotropy and low Curie temperature were fabricated, and their magneto resistance (MR)properties and thermally assisted magnetization switching utilizing Joule heat generated by a current pulse through the junction were confirmed. The [Co/Pd]/MgO / TbFe junction with a barrier thickness of 1.4 nm exhibited an areal resistance of 342 Ωum^2 and an MR ratio of 9 %at a low bias voltage of 40 mV. The coercivity of TbFe memory layer was more than 1 .5 kOe at room temperature, however the magnetization of the TbFe switched at an external field of 100 Oe when the current pulse with a pulse width 1 00 msec was applied through the junction, which results from Joule heat generated by the current pulse.}, pages = {33--37}, title = {TbFe垂直磁化膜をメモリー層とした磁気トンネル接合の熱アシスト磁化反転}, volume = {112}, year = {2013} }