{"_buckets": {"deposit": "6c896aa1-e63a-4fae-b8fa-b1af578d447c"}, "_deposit": {"id": "21345", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21345"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021345", "sets": ["322"]}, "author_link": ["61599", "61600"], "item_10_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Role of Computational Sciences in Design of Modern Electron Devices", "subitem_alternative_title_language": "en"}]}, "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2013-11", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "296", "bibliographicPageEnd": "14", "bibliographicPageStart": "9", "bibliographicVolumeNumber": "113", "bibliographic_titles": [{"bibliographic_title": "電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス", "bibliographic_titleLang": "ja"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "最近の計算科学は材料・デバイス開発においても大きな役割を占めるようになってきている。中でも第一原理計算に代表される物質設計ツールの充実は目覚ましいものがあり、半導体技術ロードマップにおいても非常に重要なツールとして認識されている。本講演では、第一原理計算に代表される計算科学が現代の電子デバイス開発において果している役割を実例をあげながら紹介する。具体的には、(1)第一原理計算の結果をベースとして、抵抗変化型メモリ(ReRAM)のON-OFFスイッチング機構の解明とそこから得られる高いON-OFF比を持つ抵抗変化型メモリの設計指針を明らかにし、(2)第一原理計算を用いてSiCの熱酸化によってC-Cボンド型欠陥の形成が不可避であることを示し、SiCパワーデバイスにおいては酸化プロセスは最小限に抑える必要があることを示した。", "subitem_description_language": "ja", "subitem_description_type": "Abstract"}, {"subitem_description": "Recent computational science plays important roles in development of new materials and modern electron devices. Among them, new material design tool such as first principles calculations becomes very popular for experimental researchers as well as theoretical researchers. In this presentation, I introduce some examples that first principles calculations plays crucial roles in modern electron devices. Two main examples are shown. (1) We propose useful guiding principles for modern Resistive Random Access Memories (ReRAM) by clarifying the ON-OFF switching mechanism by first principles calculations. (2) We show that oxidation process should be minimized in SiC-MOSFET fabrication to avoid C-C bond defect formation at the oxidation front.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110009889347/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23489"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "一般社団法人電子情報通信学会", "subitem_publisher_language": "ja"}]}, "item_10_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://ci.nii.ac.jp/naid/110009889347/", "subitem_relation_type_select": "URI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである", "subitem_rights_language": "ja"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0913-5685", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "白石, 賢二", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61599", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "SHIRAISHI, Kenji", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61600", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-21"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "110009889347.pdf", "filesize": [{"value": "793.1 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 793100.0, "url": {"label": "110009889347.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/21345/files/110009889347.pdf"}, "version_id": "ebda2283-b34f-4395-8877-eb2f9d7bbcf9"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "計算科学", "subitem_subject_scheme": "Other"}, {"subitem_subject": "第一原理計算", "subitem_subject_scheme": "Other"}, {"subitem_subject": "電子デバイス", "subitem_subject_scheme": "Other"}, {"subitem_subject": "物質設計", "subitem_subject_scheme": "Other"}, {"subitem_subject": "抵抗変化型メモリ", "subitem_subject_scheme": "Other"}, {"subitem_subject": "SiCパワーデバイス", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Computational Sciences", "subitem_subject_scheme": "Other"}, {"subitem_subject": "First Principles Calculations", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Electron Devices", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Material Design", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "計算科学に基づく電子デバイス設計の現状", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "計算科学に基づく電子デバイス設計の現状", "subitem_title_language": "ja"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/23489", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-02-19"}, "publish_date": "2016-02-19", "publish_status": "0", "recid": "21345", "relation": {}, "relation_version_is_last": true, "title": ["計算科学に基づく電子デバイス設計の現状"], "weko_shared_id": -1}