{"_buckets": {"deposit": "ac6dd0ee-51b9-4687-9dcc-f6102f064238"}, "_deposit": {"id": "21365", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21365"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021365", "sets": ["322"]}, "author_link": ["61705", "61706", "61707", "61708", "61709", "61710", "61711", "61712"], "control_number": "21365", "item_10_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Characterization of carbon nanotube thin-film transistors by scanning probe microscopy", "subitem_alternative_title_language": "en"}]}, "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2011-02", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "424", "bibliographicPageEnd": "36", "bibliographicPageStart": "31", "bibliographicVolumeNumber": "110", "bibliographic_titles": [{"bibliographic_title": "電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス", "bibliographic_titleLang": "ja"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "プラズマCVD法を用いて作製したカーボンナノチューブ(CNT)薄膜トランジスタの電気伝導特性を走査型プローブ顕微鏡により解析した。その結果、サブスレッショルド領域ではチャネルが島状構造を形成し、ON状態ではその島構造が緩和する結果が得られた。この結果は、半導体CNTの抵抗がゲートバイアスにより変化し電気伝導に関与するCNTの本数が変化するためだと考えられる。またモンテカルロシミュレーションを行ったところ実験結果に対応する結果が得られた。なお、欠陥を含む金属CNTの電気伝導への影響やサブスレッショルド領域でのドレイン電流のばらつきに関しても述べる。", "subitem_description_language": "ja", "subitem_description_type": "Abstract"}, {"subitem_description": "The electrical properties of CNT-FETs fabricated using PECVD were studied by scanning probe microscopy. The measured results suggest the formation of an island structure in the subthreshold regime and disappearance of the island structure at ON state. These results were explained by the change in the effective number of the CNTs which contribute to the electrical conduction due to the gate-bias-dependent resistance of the semiconducting CNTs. The results obtained by Monte Carlo simulation revealed similar results. The effects of metallic CNTs with defects and the scatter of the drain current in the subthreshold regime were also examined.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "IEICE Technical Report;ED2010-197, IEICE Technical Report;SDM2010-232", "subitem_description_language": "en", "subitem_description_type": "Other"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23509"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "一般社団法人電子情報通信学会", "subitem_publisher_language": "ja"}]}, "item_10_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": 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"attribute_value_mlt": [{"creatorNames": [{"creatorName": "沖川, 侑揮", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61705", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "大野, 雄高", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61706", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "岸本, 茂", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61707", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "水谷, 孝", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61708", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "OKIGAWA, Yuki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61709", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "OHNO, Yutaka", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61710", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "KISHIMOTO, Shigeru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61711", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MIZUTANI, Takashi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61712", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-21"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "110008689362.pdf", "filesize": [{"value": "1.1 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 1100000.0, "url": {"label": "110008689362.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/21365/files/110008689362.pdf"}, "version_id": "4ee1c4f1-4458-41f5-8884-7d3de8e94129"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "カーボンナノチューブ", "subitem_subject_scheme": "Other"}, {"subitem_subject": "薄膜トランジスタ", "subitem_subject_scheme": "Other"}, {"subitem_subject": "プラズマCVD法", "subitem_subject_scheme": "Other"}, {"subitem_subject": "走査型プローブ顕微鏡", "subitem_subject_scheme": "Other"}, {"subitem_subject": "モンテカルロシミュレーション", "subitem_subject_scheme": "Other"}, {"subitem_subject": "carbon nanotube", "subitem_subject_scheme": "Other"}, {"subitem_subject": "thin-film transistors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "plasma−enhanced chemical vapor deposition", "subitem_subject_scheme": "Other"}, {"subitem_subject": "scanning probe microscopy", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Monte−Carlo simulation", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": 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