{"created":"2021-03-01T06:29:01.782127+00:00","id":21366,"links":{},"metadata":{"_buckets":{"deposit":"74f18448-710f-4971-93c9-011d87932bee"},"_deposit":{"id":"21366","owners":[],"pid":{"revision_id":0,"type":"depid","value":"21366"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00021366","sets":["320:321:322"]},"author_link":["61713","61714","61715","61716","61717","61718","61719","61720"],"control_number":"21366","item_10_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition","subitem_alternative_title_language":"en"}]},"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"46","bibliographicPageEnd":"190","bibliographicPageStart":"185","bibliographicVolumeNumber":"111","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス","bibliographic_titleLang":"ja"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Al_2O_3/AlGaN/GaN MOSFETのFET特性改善のため、Al_2O_3成膜前の前処理として(NH_4)_2S(硫化アンモニウム)処理を検討した。まず初めに、Al_2O_3/n-GaN MOSダイオードを用いて、(NH_4)_2S処理の効果を検討した所、Al_2O_3成膜前に(NH_4)_2S処理を行うことでC-Vカーブの傾きが(NH_4)_2S処理なしに比べて急峻になり、界面準位密度も低減した。次に本(NH_4)_2S処理をAl_2O_3/AlGaN/GaN MOSFETに適用したところ、I_D,g_m-V_<GS>特性におけるヒステリシスが減少し、また大きなゲート電圧におけるI_Dの上詰まりも改善した。これらの結果は硫化アンモニウム処理により、Al_2O_3/AlGaN界面の界面準位密度が低減したことを示唆している。またさらなる界面品質の向上を目指して、C-V測定後アニールを行ったところ、C-Vカーブの立ち上がりが正側にシフトし、界面準位密度も低減した。","subitem_description_language":"ja","subitem_description_type":"Abstract"},{"subitem_description":"We have introduced (NH_4)_2S surface treatments before the deposition of the Al_2O_3 gate oxide to improve the electrical properties of Al_2O_3/AlGaN/GaN MOSFETs. Firstly, the effect of (NH_4)_2S surface treatment was studied using Al_2O_3/GaN MOS diodes. The slope in the C-V curve of the MOS diodes with (NH_4)_2S surface treatments was steeper than that of the devices without (NH_4)_2S. In addition, Al_2O_3/GaN interface trap density was decreased by (NH_4)_2S surface treatments. The hysteresis of the Al_2O_3/AlGaN/GaN MOSFET with (NH_4)_2S surface treatments in I_D-V_<GS> and g_m-V_<GS> characteristics was smaller than that of the device without (NH_4)_2S surface treatments. In addition, the current saturation in I_D-V_<GS> characteristics at a large gate voltage is relaxed. These results indicate that Al_2O_3/AlGaN interface trap density is decreased by (NH_4)_2S surface treatments. The annealing of the MOS diodes was shown to be effective in improving the interface quality of the MOS diodes.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"IEICE Technical Report;ED2011-36, IEICE Technical Report;CPM2011-43, IEICE Technical Report;SDM2011-49","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/23510"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"一般社団法人電子情報通信学会","subitem_publisher_language":"ja"}]},"item_10_relation_43":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://ci.nii.ac.jp/naid/110008726168/","subitem_relation_type_select":"URI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである","subitem_rights_language":"ja"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0913-5685","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"宮崎, 英志","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"61713","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"合田, 祐司","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"61714","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"岸本, 茂","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"61715","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"水谷, 孝","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"61716","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Miyazaki, Eiji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"61717","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gouda, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"61718","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kishimoto, Shigeru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"61719","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Mizutani, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"61720","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"110008726168.pdf","filesize":[{"value":"758.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"110008726168.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/21366/files/110008726168.pdf"},"version_id":"ebbadc70-70dd-4f44-9390-0231893f2e50"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Al203/AlGaN/GaN MOSFET","subitem_subject_scheme":"Other"},{"subitem_subject":"硫化アンモニウム","subitem_subject_scheme":"Other"},{"subitem_subject":"界面準位密度","subitem_subject_scheme":"Other"},{"subitem_subject":"(NH4)2S","subitem_subject_scheme":"Other"},{"subitem_subject":"interface trap density","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"原子層堆積Al2O3をゲート絶縁膜とするAlGaN/GaN MOSFETの作製と評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"原子層堆積Al2O3をゲート絶縁膜とするAlGaN/GaN MOSFETの作製と評価","subitem_title_language":"ja"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-02-22"},"publish_date":"2016-02-22","publish_status":"0","recid":"21366","relation_version_is_last":true,"title":["原子層堆積Al2O3をゲート絶縁膜とするAlGaN/GaN MOSFETの作製と評価"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:10:36.054107+00:00"}