{"created":"2021-03-01T06:29:01.846186+00:00","id":21367,"links":{},"metadata":{"_buckets":{"deposit":"59e6c87f-720e-4b04-959e-2137209dc9a4"},"_deposit":{"id":"21367","owners":[],"pid":{"revision_id":0,"type":"depid","value":"21367"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00021367","sets":["320:321:322"]},"author_link":["61721","61722","61723","61724","61725","61726","61727","61728"],"control_number":"21367","item_10_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Charge distribution near interface of high-k gate insulator in CNFETs","subitem_alternative_title_language":"en"}]},"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"426","bibliographicPageEnd":"87","bibliographicPageStart":"83","bibliographicVolumeNumber":"111","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス","bibliographic_titleLang":"ja"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"カーボンナノチューブ電界効果型トランジスタ(CNFET)のゲート絶縁膜界面に生ずる界面電荷について、ケルビンプローブフォース顕微鏡を用いて調べ、Au電極やSiO_2基板との界面付近に高濃度の正電荷が偏在することを見出している。デバイスシミュレーションにより、これらの界面電荷がCNFETの特性に及ぼす影響について調べ、主にAu電極とゲート絶縁膜との界面に存在する電荷がCNFETの伝導型極性を変化させることを明らかにしている。","subitem_description_language":"ja","subitem_description_type":"Abstract"},{"subitem_description":"We have investigated the interface charges generated at the interfaces of the gate insulator in carbon nanotube field-effect transistors (CNFETs) by Kelvin probe force microscopy. It has been found that positive charges are concentrated near the interfaces of the gate insulator with Au electrodes and with a SiO_2 substrate. We have also studied the effect of the positive interface charges on the property of CNFETs, using the device simulation. It has been revealed that the charges at the interface of the gate insulator with the Au electrodes is responsible for the change in the polarity of conduction carriers of CNFETs.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"IEICE Technical Report;ED2011-156, IEICE Technical Report;SDM2011-173","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/23511"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"一般社団法人電子情報通信学会","subitem_publisher_language":"ja"}]},"item_10_relation_43":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://ci.nii.ac.jp/naid/110009482045/","subitem_relation_type_select":"URI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである","subitem_rights_language":"ja"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0913-5685","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"鈴木, 耕佑","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"61721","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大野, 雄高","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"61722","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"岸本, 茂","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"61723","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"水谷, 孝","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"61724","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"SUZUKI, Kosuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"61725","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"OHNO, Yutaka","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"61726","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"KISHIMOTO, Shigeru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"61727","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"MIZUTANI, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"61728","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"110009482045.pdf","filesize":[{"value":"685.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"110009482045.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/21367/files/110009482045.pdf"},"version_id":"55a66780-a144-4905-adb2-16e502744e19"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"カーボンナノチューブ","subitem_subject_scheme":"Other"},{"subitem_subject":"ALD","subitem_subject_scheme":"Other"},{"subitem_subject":"high-k","subitem_subject_scheme":"Other"},{"subitem_subject":"ゲート絶縁膜","subitem_subject_scheme":"Other"},{"subitem_subject":"界面","subitem_subject_scheme":"Other"},{"subitem_subject":"carbon nanotube","subitem_subject_scheme":"Other"},{"subitem_subject":"gate insulator","subitem_subject_scheme":"Other"},{"subitem_subject":"interface","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"CNFETにおけるhigh-kゲート絶縁膜界面近傍の電荷分布とその影響","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"CNFETにおけるhigh-kゲート絶縁膜界面近傍の電荷分布とその影響","subitem_title_language":"ja"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-02-22"},"publish_date":"2016-02-22","publish_status":"0","recid":"21367","relation_version_is_last":true,"title":["CNFETにおけるhigh-kゲート絶縁膜界面近傍の電荷分布とその影響"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:10:36.163659+00:00"}