{"created":"2021-03-01T06:29:06.965197+00:00","id":21444,"links":{},"metadata":{"_buckets":{"deposit":"6f0dc4a4-5ee4-4b2e-8318-c265682e33bd"},"_deposit":{"id":"21444","owners":[],"pid":{"revision_id":0,"type":"depid","value":"21444"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00021444","sets":["320:321:322"]},"author_link":["62274","62275","62276","62277","62278","62279","62280","62281","62282","62283","62284","62285"],"item_10_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Photoemission Study of Chemical Bonding Features at Metal/GeO_2 Interfaces","subitem_alternative_title_language":"en"}]},"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-06-27","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"114","bibliographicPageEnd":"68","bibliographicPageStart":"63","bibliographicVolumeNumber":"111","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス","bibliographic_titleLang":"ja"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"熱酸化により形成したGeO_2/Ge(100)界面および金属(Al,AuおよびPt)薄膜形成後のGeO_2との界面化学結合状態をXPS分析により評価した。室温のAl蒸着において、GeO_2初期膜厚(>〜1nm)に関わらず、厚さ〜1nm程度GeO_2が還元されることが明らかになった。初期GeO_2膜厚が1.0nm程度の場合にはGeO_2からAlへの酸素原子の拡散が支配的であり、GeO_2膜厚が1.9nm以上の場合は酸素原子拡散に加えてAl-Ge結合の形成が明瞭に観測された。また、極薄AuおよびPtを熱酸化GeO_2上に堆積した場合、金属/GeO_2界面に熱酸化GeO_2/Ge界面と同等量のサブオキサイド成分(GeO_x:0<x<2)の形成を確認した。","subitem_description_language":"ja","subitem_description_type":"Abstract"},{"subitem_description":"We have investigated chemical bonding features at thermally-grown GeO_2/Ge(100) and metals (Al, Au and Pt)/GeO_2 interfaces by using high-resolution X-ray photoelectron spectroscopy (XPS). After the Al evaporation on GeO_2 thicker than 1.9nm initially, a reduction of GeO_2 accompanied with the generation of Al-Ge bonds was observed near the interface between Al and GeO_2. From the deconvolution of measured Ge3ds/2 spectra taken after physical vapor deposition of Au- and Pt-ultrathin films on thermally-grown GeO_2, we have confirmed the formation of Ge sub-oxide components (GeO_x 0<x<2) at the metal/GeO_2 interfaces being quantitatively comparable to sub-oxides at the thermally-grown GeO_2/Ge(100) interface.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"URI","subitem_identifier_uri":"http://ci.nii.ac.jp/naid/110008800857/"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/23574"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"一般社団法人電子情報通信学会","subitem_publisher_language":"ja"}]},"item_10_relation_43":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://ci.nii.ac.jp/naid/110008800857/","subitem_relation_type_select":"URI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである","subitem_rights_language":"ja"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09135685","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"松井, 真史","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62274","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"藤岡, 知宏","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62275","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大田, 晃生","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62276","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"村上, 秀樹","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62277","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"東, 清一郎","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62278","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"宮崎, 誠一","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62279","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Matsui, Masafumi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62280","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fujioka, Tomohiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62281","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohta, Akio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62282","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Murakami, Hideki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62283","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Higashi, Seiichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62284","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Miyazaki, Seiichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62285","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"110008800857.pdf","filesize":[{"value":"760.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"110008800857.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/21444/files/110008800857.pdf"},"version_id":"1e2e0c16-e10d-491c-be08-32ff66373b1e"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Geチャネル","subitem_subject_scheme":"Other"},{"subitem_subject":"サブオキサイド","subitem_subject_scheme":"Other"},{"subitem_subject":"界面反応","subitem_subject_scheme":"Other"},{"subitem_subject":"化学結合状態","subitem_subject_scheme":"Other"},{"subitem_subject":"X線光電子分光法","subitem_subject_scheme":"Other"},{"subitem_subject":"Ge-channel","subitem_subject_scheme":"Other"},{"subitem_subject":"Sub-oxide","subitem_subject_scheme":"Other"},{"subitem_subject":"Interfacial Reaction","subitem_subject_scheme":"Other"},{"subitem_subject":"Chemical Bonding Features","subitem_subject_scheme":"Other"},{"subitem_subject":"X-ray Photoelectron Spectroscopy (XPS)","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"金属/GeO_2界面における化学結合状態の光電子分光分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"金属/GeO_2界面における化学結合状態の光電子分光分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)","subitem_title_language":"ja"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-02-24"},"publish_date":"2016-02-24","publish_status":"0","recid":"21444","relation_version_is_last":true,"title":["金属/GeO_2界面における化学結合状態の光電子分光分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:10:26.950031+00:00"}