{"created":"2021-03-01T06:29:07.164673+00:00","id":21447,"links":{},"metadata":{"_buckets":{"deposit":"6778d9a2-e6bb-4f15-a5cd-d84238098cd1"},"_deposit":{"id":"21447","owners":[],"pid":{"revision_id":0,"type":"depid","value":"21447"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00021447","sets":["320:321:322"]},"author_link":["62294","62295","62296","62297","62298","62299","62300","62301","62302","62303","62304","62305"],"item_10_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Control of Interfacial Reactions in HfO_2 Atomic-Layer-Deposition on Ge(100) and Post-deposition Anneal with Ultrathin TiO_x Capping on Ge(100)","subitem_alternative_title_language":"en"}]},"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-06-27","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"114","bibliographicPageEnd":"50","bibliographicPageStart":"47","bibliographicVolumeNumber":"111","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス","bibliographic_titleLang":"ja"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"High-k/Ge界面制御手法として、極薄TiO_2層の挿入に着目し、塩酸処理したGe(100)表面上へのTiO_2の原子層制御CVDを検討した。さらに、誘電率低下の要因となるGe界面酸化層の形成の抑制を目指し、TEMAT錯体の飽和吸着と熱分解の繰り返しにより極薄低酸化TiO_x(x<2)層をGe(100)基板上に形成後、HfO_2層を原子層制御堆積した。熱処理前後でX線光電子分光法(XPS)を用いて界面反応を評価した結果、厚さ〜2nm以上のTiO_x挿入によりHfO_2膜中への顕著なGe原子の拡散を抑制可能であることを明らかとした。","subitem_description_language":"ja","subitem_description_type":"Abstract"},{"subitem_description":"To control interfacial reaction between high-k dielectric and Ge(100) we focused on insertion of TiO_x ultrathin layer with a high permittivity(ε: 50-80) as a interfacial barrier layer and studied atomic-layer controlled CVD process of TiO_2 on HC1-treated Ge(100). In order to suppress the growth of GeO_x layer with a low permittivity during the formation of high-k dielectric such as HfO_2, TiO_x (x<2) ultrathin layers were formed on Ge(100) by repeating saturated adsorption of TEMAT and its thermal decomposition. X-ray photoelectron spectroscopy after HfO_2 layer formation on TiO_x/Ge(100) show that Ge atoms diffusion in the HfO_2 layer is efficiently suppressed by inserting TiO_x thicker than 2nm.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"URI","subitem_identifier_uri":"http://ci.nii.ac.jp/naid/110008800854/"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/23580"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"一般社団法人電子情報通信学会","subitem_publisher_language":"ja"}]},"item_10_relation_43":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://ci.nii.ac.jp/naid/110008800854/","subitem_relation_type_select":"URI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである","subitem_rights_language":"ja"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09135685","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"村上, 秀樹","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62294","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"藤岡, 知宏","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62295","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大田, 晃生","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62296","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"三嶋, 健斗","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62297","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"東, 清一郎","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62298","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"宮崎, 誠一","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62299","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"MURAKAMI, Hideki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62300","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"FUJIOKA, Tomohiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62301","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"OHTA, Akio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62302","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"MISHIMA, Kento","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62303","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"HIGASHI, Seiichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62304","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"MIYAZAKI, Seiichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62305","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"110008800854.pdf","filesize":[{"value":"674.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"110008800854.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/21447/files/110008800854.pdf"},"version_id":"0e0efaeb-8828-46bf-b9c1-ae7d96e05600"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Geチャネル","subitem_subject_scheme":"Other"},{"subitem_subject":"ALD","subitem_subject_scheme":"Other"},{"subitem_subject":"界面反応","subitem_subject_scheme":"Other"},{"subitem_subject":"化学結合状態","subitem_subject_scheme":"Other"},{"subitem_subject":"X線光電子分光法","subitem_subject_scheme":"Other"},{"subitem_subject":"Ge-Channel","subitem_subject_scheme":"Other"},{"subitem_subject":"Atomic Layer Deposition","subitem_subject_scheme":"Other"},{"subitem_subject":"Interfacial Reaction","subitem_subject_scheme":"Other"},{"subitem_subject":"Chemical Bonding Feature","subitem_subject_scheme":"Other"},{"subitem_subject":"X-ray Photoelectron Spectroscopy (XPS)","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ge(100)表面の極薄TiO_xキャッピングによるHfO_2原子層堆積/熱処理時の界面反応制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ge(100)表面の極薄TiO_xキャッピングによるHfO_2原子層堆積/熱処理時の界面反応制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)","subitem_title_language":"ja"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-02-24"},"publish_date":"2016-02-24","publish_status":"0","recid":"21447","relation_version_is_last":true,"title":["Ge(100)表面の極薄TiO_xキャッピングによるHfO_2原子層堆積/熱処理時の界面反応制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:10:23.320113+00:00"}