{"created":"2021-03-01T06:29:07.566955+00:00","id":21453,"links":{},"metadata":{"_buckets":{"deposit":"1ea17ff7-94be-4e30-9499-1f0f7a04cacd"},"_deposit":{"id":"21453","owners":[],"pid":{"revision_id":0,"type":"depid","value":"21453"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00021453","sets":["320:321:322"]},"author_link":["62322","62323","62324","62325","62326","62327","62328","62329","62330","62331","62332","62333"],"item_10_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Characterization of Local Electronic Transport and Electronic Emission Properties of Pillar-Shaped Si Nanostructures","subitem_alternative_title_language":"en"}]},"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012-05-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"34","bibliographicPageEnd":"98","bibliographicPageStart":"95","bibliographicVolumeNumber":"112","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス","bibliographic_titleLang":"ja"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"下部電極としてW薄膜を形成した石英基板上に、プラズマCVDにより柱状Siナノ構造を高密度・一括形成した後、電気化学法による柱状Siの絶縁分離・ナノ結晶化処理後、上部電極として極薄Au電極を形成したAu/柱状Siナノ構造/Wのスタック構造において、導電性AFM探針を用いた二次元電流像の接触および非接触測定を行うことで、柱状ナノ構造の局所電気伝導を評価した。下部W電極-3V、上部Au電極を接地電位として、Au上部電極表面を接触測定した結果、膜中柱状Siナノ構造を反映して、極薄Au電極表面における弾道電子濃度の違いに起因した明瞭な高伝導領域が認められた.さらに、探針-基板間距離200nmで測定した二次元電流像においても、下部電圧-20V以上印加した場合に、非接触にも関わらず直径〜50nmの高伝導領域が明瞭に認められた。この高伝導領域は、表面形状像測定で確認された柱状Siナノ構造と直径が同程度であることから、電極間印加により膜中柱状Siナノ構造からの弾道電子検出で解釈できる。","subitem_description_language":"ja","subitem_description_type":"Abstract"},{"subitem_description":"A highly-dense Si nanocolumnar structure accompanied with Si nanocrystals was fabricated on a W layer /quartz by inductively-coupled plasma enhanced CVD and treated with anodic oxidation. And after the formation of a few nanometer thick Au layer as a top-electrode, electron transport properties through Si nanocolumnar structures so-prepared were characterized by means of atomic force microscopy (AFM) with a conductive cantilever in both contact and non-contact modes. When the W bottom electrode was biased at -23V with respect to the grounded Au-top electrode, a current increase of the order of 〜3pA was detected in several areas corresponding to Si nanocolumns even in the condition that the distance between the sample surface and the AFM probe was kept constant typically at 200nm. The result is attributable to the electron emission as a result of inelastic transport through Si nanocrystals via nanocolumnar structure.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"URI","subitem_identifier_uri":"http://ci.nii.ac.jp/naid/110009569658/"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/23583"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"一般社団法人電子情報通信学会","subitem_publisher_language":"ja"}]},"item_10_relation_43":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://ci.nii.ac.jp/naid/110009569658/","subitem_relation_type_select":"URI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである","subitem_rights_language":"ja"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0913-5685","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"竹内, 大智","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62322","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧原, 克典","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62323","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"池田, 弥央","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62324","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"宮崎, 誠一","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62325","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"可貴, 裕和","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62326","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"林, 司","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62327","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"TAKEUCHI, Daichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62328","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"MAKIHARA, Katsunori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62329","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"IKEDA, Mitsuhisa","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62330","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"MIYAZAKI, Seiichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62331","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"KAKI, Hirokazu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62332","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"HAYASHI, Tsukasa","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62333","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"110009569658.pdf","filesize":[{"value":"664.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"110009569658.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/21453/files/110009569658.pdf"},"version_id":"0f6d75af-562b-4b84-952e-4cd84dd354a3"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"柱状Siナノ構造","subitem_subject_scheme":"Other"},{"subitem_subject":"AFM","subitem_subject_scheme":"Other"},{"subitem_subject":"電流像","subitem_subject_scheme":"Other"},{"subitem_subject":"電子放出","subitem_subject_scheme":"Other"},{"subitem_subject":"Si Nanocolumnar","subitem_subject_scheme":"Other"},{"subitem_subject":"AFM","subitem_subject_scheme":"Other"},{"subitem_subject":"Current Image","subitem_subject_scheme":"Other"},{"subitem_subject":"Electron Emission","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"柱状Siナノ構造における局所電気伝導と電子放出特性評価(酸化物(成膜・評価).電子源,結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"柱状Siナノ構造における局所電気伝導と電子放出特性評価(酸化物(成膜・評価).電子源,結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))","subitem_title_language":"ja"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-02-24"},"publish_date":"2016-02-24","publish_status":"0","recid":"21453","relation_version_is_last":true,"title":["柱状Siナノ構造における局所電気伝導と電子放出特性評価(酸化物(成膜・評価).電子源,結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:10:23.728771+00:00"}