{"created":"2021-03-01T06:29:07.766650+00:00","id":21456,"links":{},"metadata":{"_buckets":{"deposit":"bd2d4aba-da94-4f30-8a14-7d9e3526bf0b"},"_deposit":{"id":"21456","owners":[],"pid":{"revision_id":0,"type":"depid","value":"21456"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00021456","sets":["320:321:322"]},"author_link":["62342","62343","62344","62345","62346","62347"],"item_10_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots and Its Application to Light Emitting Diodes","subitem_alternative_title_language":"en"}]},"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012-05-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"32","bibliographicPageEnd":"6","bibliographicPageStart":"1","bibliographicVolumeNumber":"112","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会技術研究報告. ED, 電子デバイス","bibliographic_titleLang":"ja"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"熱SiO_2膜上のSi-QDs上にGeを選択成長させ、酸化・高温熱処理を施した後、SiH_4-LPCVDを行うことによって、自己整合的に一次元連結したSi-QDsを形成することができ、n-Si(100)上に形成した半透明Auゲート一次元連結ドットダイオード構造において、Auゲートから正孔、基板から電子を注入することで、閾値電圧〜1.2V 以上を印加した場合、近赤外光領域での明瞭な室温発光が認められた。さらに、極薄熱SiO_2膜上に縦積連結したSi系量子ドットを超高密度形成(〜10^<13>cm^<-2>)することで、高効率キャリア注入が実現でき、電流密度〜0.15A/cm^2においてEL強度を連結ドット密度〜10^<11>cm^<-2>の場合と比べて〜425倍増大させることが出来た。これは、連結ドット内へ高効率キャリア注入されるためEL効率が向上するとともに、1層目のドット表面熱酸化に伴う体積膨張によって、隣接するドット間がシリコン酸化物で充填され、ドットが埋め込まれた構造となるため、ドットを介さない電流成分が抑制された結果で解釈できる。","subitem_description_language":"ja","subitem_description_type":"Abstract"},{"subitem_description":"Self-aligned Si quantum dots (Si-QDs) have been successfully fabricated on ultrathin SiO_2 by controlling low-pressure chemical vapor deposition (LPCVD) using pure SiH_4 and/or Si_2H_6, selective Ge LPCVD from 5% GeH_4 diluted with He, thermal oxidation of the dots and subsequent thermal desorption of Ge oxide. In semitransparent Au-gate diodes with self-aligned dots so-prepared, when carriers were injected to the self-aligned Si-QDs from the n-Si(100) substrate for electrons and from the Au top electrode for holes, electroluminescence (EL) in the near-infrared region at room temperature becomes observable with an increase in current at positive biases over a threshold voltage as low as 〜1.2 V at the Au top electrode. Note that, in the case of an areal dot density of 〜10^<13>cm^<-2>, the emission intensity was enhanced markedly by a factor of 〜425 in comparison with the case of 〜10^<11> cm-<-2> under the same current density at 〜0.15A/cm^2. This is clear evidence of not only an increase in radiative recombination rate in the self-aligned structure but also an improvement of recombination efficiency due to a decrease in current leakage with increasing dot density.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"URI","subitem_identifier_uri":"http://ci.nii.ac.jp/naid/110009569516/"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/23585"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"一般社団法人電子情報通信学会","subitem_publisher_language":"ja"}]},"item_10_relation_43":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://ci.nii.ac.jp/naid/110009569516/","subitem_relation_type_select":"URI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである","subitem_rights_language":"ja"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0913-5685","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"牧原, 克典","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62342","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"池田, 弥央","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62343","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"宮崎, 誠一","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62344","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"MAKIHAR, Katsunori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62345","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"IKEDA, Mitsuhisa","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62346","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"MIYAZAKI, Seiichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62347","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"110009569516.pdf","filesize":[{"value":"856.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"110009569516.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/21456/files/110009569516.pdf"},"version_id":"44cf76ff-1d87-437a-a8e3-fc1e8b76bd8b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Si量子ドット","subitem_subject_scheme":"Other"},{"subitem_subject":"連結構造","subitem_subject_scheme":"Other"},{"subitem_subject":"発光ダイオード","subitem_subject_scheme":"Other"},{"subitem_subject":"化学気相堆積法","subitem_subject_scheme":"Other"},{"subitem_subject":"Si-based Quantum Dots","subitem_subject_scheme":"Other"},{"subitem_subject":"Self-Aligned Structure","subitem_subject_scheme":"Other"},{"subitem_subject":"Light Emitting Diodes","subitem_subject_scheme":"Other"},{"subitem_subject":"LPCVD","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"一次元縦積みシリコン系量子ドットの形成と発光ダイオードへの応用(Siウェハ上結晶成長・評価・デバイス応用,結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"一次元縦積みシリコン系量子ドットの形成と発光ダイオードへの応用(Siウェハ上結晶成長・評価・デバイス応用,結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))","subitem_title_language":"ja"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-02-24"},"publish_date":"2016-02-24","publish_status":"0","recid":"21456","relation_version_is_last":true,"title":["一次元縦積みシリコン系量子ドットの形成と発光ダイオードへの応用(Siウェハ上結晶成長・評価・デバイス応用,結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:10:22.894803+00:00"}