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As^+イオン注入したゲルマニウム層の化学分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)
http://hdl.handle.net/2237/23586
c4843b20-57ab-45a8-95ce-2a2fd49397f3
名前 / ファイル | ライセンス | アクション | |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2016-02-24 | |||||
タイトル | ||||||
タイトル | As^+イオン注入したゲルマニウム層の化学分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術) | |||||
その他のタイトル | ||||||
その他のタイトル | Chemical Analysis of As^+ -implanted Ge(100) | |||||
著者 |
小野, 貴寛
× 小野, 貴寛× 大田, 晃生× 村上, 秀樹× 東, 清一郎× 宮崎, 誠一× Ono, Takahiro× Ohta, Akio× Murakami, Hideki× Higashi, Seiichiro× Miyazaki, Seiichi |
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権利 | ||||||
権利情報 | (c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Ge | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | イオン注入 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 不純物活性化 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 化学結合状態 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 硬X線光電子分光法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Ion Implantation | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Dopant Activation | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Chemical Bonding Features | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Hard X-ray Photoemission Spectroscopy (HAXPES) | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | 高濃度As^+イオン注入したGe(100)でのAsの活性化に対する知見を得るために、加速電圧10keV,ドーズ量1x10^<15>cm^<-2>でイオン注入後、熱処理に伴う化学構造変化やAs活性化状況を系統的に調べた。イオン注入により、p型Ge(100)基板の表層深さ約19nmが非晶質化すると共に、アクセプター型欠陥準位が生成されることが明らかになった。熱処理による基板側から再結晶化と伴って、Asの活性化が進行し、一部のAsは非晶質/結晶回復層の界面近傍に偏析することが分かった。硬X線光電子分光により、Ge中のAsの化学結合状態を評価した結果、500℃の熱処理後では、活性化した成分に相当するAs^<1+>と不活性な成分に相当するAs^<0+>の結合状態が存在し、As^<1+>の成分比から算出した活性化率は〜4%で、ホール効果測定結果とほぼ一致することが分かった。この結果は、Siの場合と同様に、クラスター形成による活性化率の低下を示している。As^+ ions were implanted into p-type Ge(100) at a dose of 1x10^<15> cm^<-2> and acceleration voltage of 10 keV, and an impact of activation annealing temperature on the chemical structure has been investigated systematically. After ion implantation, a formation of 19 nm-thick amorphous Ge including accepter-like defects was observed. During activation annealing in N_2 ambience, re-crystallization of amorphous Ge layer and activation of implanted As^+ ions were promoted from the substrate side. Hard x-ray photoemission spectroscopy (HAXPES) analyses of 500℃ annealed sample show the presence of two chemical states of As ions originating from activated As (As^<1+>) and inactivated As (As^<0+>). From the spectral deconvolution, activation ratio of implanted As ions was crudely estimated to be 〜4%, which was almost consistent with the electrical properties. | |||||
出版者 | ||||||
出版者 | 一般社団法人電子情報通信学会 | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0913-5685 | |||||
書誌情報 |
電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 巻 112, 号 92, p. 63-67, 発行日 2012-06-14 |
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著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://ci.nii.ac.jp/naid/110009588307/ | |||||
識別子タイプ | URI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/23586 | |||||
識別子タイプ | HDL |