{"_buckets": {"deposit": "6d4e05d1-69d5-4873-af3d-e424460373e1"}, "_deposit": {"id": "21457", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21457"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021457", "sets": ["322"]}, "author_link": ["62348", "62349", "62350", "62351", "62352", "62353", "62354", "62355", "62356", "62357"], "item_10_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Chemical Analysis of As^+ -implanted Ge(100)", "subitem_alternative_title_language": "en"}]}, "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2012-06-14", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "92", "bibliographicPageEnd": "67", "bibliographicPageStart": "63", "bibliographicVolumeNumber": "112", "bibliographic_titles": [{"bibliographic_title": "電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス", "bibliographic_titleLang": "ja"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "高濃度As^+イオン注入したGe(100)でのAsの活性化に対する知見を得るために、加速電圧10keV,ドーズ量1x10^\u003c15\u003ecm^\u003c-2\u003eでイオン注入後、熱処理に伴う化学構造変化やAs活性化状況を系統的に調べた。イオン注入により、p型Ge(100)基板の表層深さ約19nmが非晶質化すると共に、アクセプター型欠陥準位が生成されることが明らかになった。熱処理による基板側から再結晶化と伴って、Asの活性化が進行し、一部のAsは非晶質/結晶回復層の界面近傍に偏析することが分かった。硬X線光電子分光により、Ge中のAsの化学結合状態を評価した結果、500℃の熱処理後では、活性化した成分に相当するAs^\u003c1+\u003eと不活性な成分に相当するAs^\u003c0+\u003eの結合状態が存在し、As^\u003c1+\u003eの成分比から算出した活性化率は〜4%で、ホール効果測定結果とほぼ一致することが分かった。この結果は、Siの場合と同様に、クラスター形成による活性化率の低下を示している。", "subitem_description_language": "ja", "subitem_description_type": "Abstract"}, {"subitem_description": "As^+ ions were implanted into p-type Ge(100) at a dose of 1x10^\u003c15\u003e cm^\u003c-2\u003e and acceleration voltage of 10 keV, and an impact of activation annealing temperature on the chemical structure has been investigated systematically. After ion implantation, a formation of 19 nm-thick amorphous Ge including accepter-like defects was observed. During activation annealing in N_2 ambience, re-crystallization of amorphous Ge layer and activation of implanted As^+ ions were promoted from the substrate side. Hard x-ray photoemission spectroscopy (HAXPES) analyses of 500℃ annealed sample show the presence of two chemical states of As ions originating from activated As (As^\u003c1+\u003e) and inactivated As (As^\u003c0+\u003e). From the spectral deconvolution, activation ratio of implanted As ions was crudely estimated to be 〜4%, which was almost consistent with the electrical properties.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110009588307/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23586"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "一般社団法人電子情報通信学会", "subitem_publisher_language": "ja"}]}, "item_10_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://ci.nii.ac.jp/naid/110009588307/", "subitem_relation_type_select": "URI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである", "subitem_rights_language": "ja"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0913-5685", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "小野, 貴寛", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62348", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "大田, 晃生", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62349", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "村上, 秀樹", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62350", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "東, 清一郎", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62351", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "宮崎, 誠一", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62352", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ono, Takahiro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62353", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohta, Akio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62354", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Murakami, Hideki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62355", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Higashi, Seiichiro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62356", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Miyazaki, Seiichi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62357", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-21"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "110009588307.pdf", "filesize": [{"value": "604.0 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 604000.0, "url": {"label": "110009588307.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/21457/files/110009588307.pdf"}, "version_id": "4fb753c9-f5d4-4c4f-85ca-d07c79fa4727"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Ge", "subitem_subject_scheme": "Other"}, {"subitem_subject": "イオン注入", "subitem_subject_scheme": "Other"}, {"subitem_subject": "不純物活性化", "subitem_subject_scheme": "Other"}, {"subitem_subject": "化学結合状態", "subitem_subject_scheme": "Other"}, {"subitem_subject": "硬X線光電子分光法", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Ion Implantation", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Dopant Activation", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Chemical Bonding Features", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Hard X-ray Photoemission Spectroscopy (HAXPES)", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "As^+イオン注入したゲルマニウム層の化学分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "As^+イオン注入したゲルマニウム層の化学分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)", "subitem_title_language": "ja"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/23586", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-02-24"}, "publish_date": "2016-02-24", "publish_status": "0", "recid": "21457", "relation": {}, "relation_version_is_last": true, "title": ["As^+イオン注入したゲルマニウム層の化学分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)"], "weko_shared_id": -1}