{"created":"2021-03-01T06:29:07.831081+00:00","id":21457,"links":{},"metadata":{"_buckets":{"deposit":"6d4e05d1-69d5-4873-af3d-e424460373e1"},"_deposit":{"id":"21457","owners":[],"pid":{"revision_id":0,"type":"depid","value":"21457"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00021457","sets":["320:321:322"]},"author_link":["62348","62349","62350","62351","62352","62353","62354","62355","62356","62357"],"item_10_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Chemical Analysis of As^+ -implanted Ge(100)","subitem_alternative_title_language":"en"}]},"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012-06-14","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"92","bibliographicPageEnd":"67","bibliographicPageStart":"63","bibliographicVolumeNumber":"112","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス","bibliographic_titleLang":"ja"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"高濃度As^+イオン注入したGe(100)でのAsの活性化に対する知見を得るために、加速電圧10keV,ドーズ量1x10^<15>cm^<-2>でイオン注入後、熱処理に伴う化学構造変化やAs活性化状況を系統的に調べた。イオン注入により、p型Ge(100)基板の表層深さ約19nmが非晶質化すると共に、アクセプター型欠陥準位が生成されることが明らかになった。熱処理による基板側から再結晶化と伴って、Asの活性化が進行し、一部のAsは非晶質/結晶回復層の界面近傍に偏析することが分かった。硬X線光電子分光により、Ge中のAsの化学結合状態を評価した結果、500℃の熱処理後では、活性化した成分に相当するAs^<1+>と不活性な成分に相当するAs^<0+>の結合状態が存在し、As^<1+>の成分比から算出した活性化率は〜4%で、ホール効果測定結果とほぼ一致することが分かった。この結果は、Siの場合と同様に、クラスター形成による活性化率の低下を示している。","subitem_description_language":"ja","subitem_description_type":"Abstract"},{"subitem_description":"As^+ ions were implanted into p-type Ge(100) at a dose of 1x10^<15> cm^<-2> and acceleration voltage of 10 keV, and an impact of activation annealing temperature on the chemical structure has been investigated systematically. After ion implantation, a formation of 19 nm-thick amorphous Ge including accepter-like defects was observed. During activation annealing in N_2 ambience, re-crystallization of amorphous Ge layer and activation of implanted As^+ ions were promoted from the substrate side. Hard x-ray photoemission spectroscopy (HAXPES) analyses of 500℃ annealed sample show the presence of two chemical states of As ions originating from activated As (As^<1+>) and inactivated As (As^<0+>). From the spectral deconvolution, activation ratio of implanted As ions was crudely estimated to be 〜4%, which was almost consistent with the electrical properties.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"URI","subitem_identifier_uri":"http://ci.nii.ac.jp/naid/110009588307/"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/23586"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"一般社団法人電子情報通信学会","subitem_publisher_language":"ja"}]},"item_10_relation_43":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://ci.nii.ac.jp/naid/110009588307/","subitem_relation_type_select":"URI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである","subitem_rights_language":"ja"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0913-5685","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"小野, 貴寛","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62348","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大田, 晃生","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62349","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"村上, 秀樹","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62350","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"東, 清一郎","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62351","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"宮崎, 誠一","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62352","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ono, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62353","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohta, Akio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62354","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Murakami, Hideki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62355","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Higashi, Seiichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62356","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Miyazaki, Seiichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62357","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"110009588307.pdf","filesize":[{"value":"604.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"110009588307.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/21457/files/110009588307.pdf"},"version_id":"4fb753c9-f5d4-4c4f-85ca-d07c79fa4727"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Ge","subitem_subject_scheme":"Other"},{"subitem_subject":"イオン注入","subitem_subject_scheme":"Other"},{"subitem_subject":"不純物活性化","subitem_subject_scheme":"Other"},{"subitem_subject":"化学結合状態","subitem_subject_scheme":"Other"},{"subitem_subject":"硬X線光電子分光法","subitem_subject_scheme":"Other"},{"subitem_subject":"Ion Implantation","subitem_subject_scheme":"Other"},{"subitem_subject":"Dopant Activation","subitem_subject_scheme":"Other"},{"subitem_subject":"Chemical Bonding Features","subitem_subject_scheme":"Other"},{"subitem_subject":"Hard X-ray Photoemission Spectroscopy (HAXPES)","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"As^+イオン注入したゲルマニウム層の化学分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"As^+イオン注入したゲルマニウム層の化学分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)","subitem_title_language":"ja"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-02-24"},"publish_date":"2016-02-24","publish_status":"0","recid":"21457","relation_version_is_last":true,"title":["As^+イオン注入したゲルマニウム層の化学分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:10:16.854511+00:00"}