{"created":"2021-03-01T06:29:08.236842+00:00","id":21463,"links":{},"metadata":{"_buckets":{"deposit":"44761d6d-01ba-40c1-a3e5-e8e7d06ecce0"},"_deposit":{"id":"21463","owners":[],"pid":{"revision_id":0,"type":"depid","value":"21463"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00021463","sets":["320:321:322"]},"author_link":["62394","62395","62396","62397","62398","62399","62400","62401"],"item_10_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Evaluation of Chemical Structures and Resistive Switching Behaviors of Pt/Si-rich Oxide/TiN System","subitem_alternative_title_language":"en"}]},"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012-06-14","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"92","bibliographicPageEnd":"6","bibliographicPageStart":"1","bibliographicVolumeNumber":"112","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス","bibliographic_titleLang":"ja"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"TiN上にRFスパッタ形成したSiリッチ酸化膜(SiO_x)の化学結合状態をX線光電子分光法(XPS)により評価し、Pt上部電極を形成したMIM非対称構造の抵抗変化特性を調べた。SiO_x膜堆積直後において、SiO_x/TiN界面に厚さ〜5nmのTiONが形成されることがXPS分析により明らかになった。また、ダイオード構造において、初期正電圧掃引時に〜2V近傍で電流値がコンプライアンス電流値まで急激に上昇するフォーミングが生じ、その後の正・負電圧交互掃引において、電流コンプライアンスを必要としないバイポーラ型のスイッチング動作が認められた。SiO_x/TiN界面に形成されたTiONの比誘電率を考慮すると、TiON層が電流制御層として機能したと考えられる。また、負電圧でフォーミングを起こした場合、同様に抵抗変化動作が認められるものの、正電圧フォーミングに比べ抵抗変化動作が低電圧で生じることが分かった。この結果は、TiNおよびPt電極の仕事関数差によって生じる電位差に加えて、上部Pt/SiO_x界面に比べて、下部TiN/SiO_x界面において、酸化・還元反応が容易に起こることで低電圧動作が実現されたと解釈できる。","subitem_description_language":"ja","subitem_description_type":"Abstract"},{"subitem_description":"We have fabricated Pt/Si-rich oxide (SiO_x)/TiN stacked MIM diodes and investigated an impact of the structural asymmetry on their resistive switching behaviors using by x-ray photoelectron spectroscopy (XPS) and current-voltage (I-V) measurements. XPS analyses show that TiON interfacial layer was formed during the SiO_x deposition on TiN by RF-sputtering in an Ar+O_2 gas mixture. Distinct bi-polar type resistive switching was observed after an electro-forming process. There is no need to set the current compliance during the resistance switch from low to high states (SET process). Considering higher dielectric constant of TiON than SiO_x, the interfacial TiON layer can contribute to regulate the current flow through the diode. The clockwise resistive switching, in which the reduction and oxidation (Red-Ox) reactions can occur near the TiN bottom electrode, shows lower operation voltages below 1.5V and better switching endurance as much as 1.4 x 10^3 as compared to the counter-clockwise switching where the Red-Ox reaction can take place near the top Pt electrode. The result implies that a good repeatable nature of the reduction and oxidation (Red-Ox) reactions at the interface between SiOx and TiON/TiN in consideration of relatively high diffusibility of oxygen atoms through Pt","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"URI","subitem_identifier_uri":"http://ci.nii.ac.jp/naid/110009588295/"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/23592"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"一般社団法人電子情報通信学会","subitem_publisher_language":"ja"}]},"item_10_relation_43":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://ci.nii.ac.jp/naid/110009588295/","subitem_relation_type_select":"URI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである","subitem_rights_language":"ja"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0913-5685","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"福嶋, 太紀","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62394","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大田, 晃生","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62395","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧原, 克典","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62396","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"宮崎, 誠一","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62397","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"FUKUSHIMA, Motoki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62398","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"OHTA, Akio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62399","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"MAKIHARA, Katsunori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62400","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"MIYAZAKI, Seiichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62401","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"110009588295.pdf","filesize":[{"value":"669.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"110009588295.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/21463/files/110009588295.pdf"},"version_id":"8978775c-7648-4cb0-949f-c6eca1766b8e"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"抵抗変化型メモリ（ReRAM）","subitem_subject_scheme":"Other"},{"subitem_subject":"Si酸化物","subitem_subject_scheme":"Other"},{"subitem_subject":"化学結合状態","subitem_subject_scheme":"Other"},{"subitem_subject":"電気抵抗スイッチング特性","subitem_subject_scheme":"Other"},{"subitem_subject":"Resistive Random Access Memories (ReRAMs)","subitem_subject_scheme":"Other"},{"subitem_subject":"Si Oxide","subitem_subject_scheme":"Other"},{"subitem_subject":"Chemical Bonding Features","subitem_subject_scheme":"Other"},{"subitem_subject":"Resistance Switching Property","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Pt/SiO_x/TiNダイオード構造の化学構造分析と電気抵抗スイッチング特性評価(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Pt/SiO_x/TiNダイオード構造の化学構造分析と電気抵抗スイッチング特性評価(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)","subitem_title_language":"ja"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-02-24"},"publish_date":"2016-02-24","publish_status":"0","recid":"21463","relation_version_is_last":true,"title":["Pt/SiO_x/TiNダイオード構造の化学構造分析と電気抵抗スイッチング特性評価(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:10:18.273320+00:00"}