{"created":"2021-03-01T06:29:08.500771+00:00","id":21467,"links":{},"metadata":{"_buckets":{"deposit":"fa281c25-75e8-4d89-b58f-d7f4f917c838"},"_deposit":{"id":"21467","owners":[],"pid":{"revision_id":0,"type":"depid","value":"21467"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00021467","sets":["320:321:322"]},"author_link":["62424","62425","62426","62427","62428","62429","62430","62431","62432","62433","62434","62435"],"item_10_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"High Density Formation of CoPt Alloy Nanodots Induced by Remote Hydrogen Plasma and Charging and Magnetizing Characteristics","subitem_alternative_title_language":"en"}]},"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-06-11","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"87","bibliographicPageEnd":"50","bibliographicPageStart":"47","bibliographicVolumeNumber":"113","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス","bibliographic_titleLang":"ja"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"CoとPtの合金化により高い一軸磁気異方性を示すCoPt合金に着目し、Co極薄膜上に形成した極薄Pt膜にリモート水素プラズマ処理を施すことで、合金ドットの形成を試みた。さらには、形成したナノドットの帯電および帯磁特性を走査プローブ顕微鏡により評価した。プラズマ処理前後の表面形状変化から、極薄Pt/Co積層膜へのリモート水素プラズマ照射によって、高密度ナノドットの高密度一括形成が認められ、形成したナノドットの光電子スペクトルにおける低運動エネルギ信号のしきい値エネルギから仕事関数を評価した結果、CoPt合金ナノドットの形成が認められた。さらには、導電性AFM探針を用いた帯電特性評価において、探針電圧-2.0V印加した後、電子注入・保持に起因した表面電位変化-30mVの負帯電が認められることから、形成した合金ナノドットは絶縁分離しており電荷保持ノードとして機能するとともに、CoPtCrコートSi探針を用いて非接触測定したMFM像において、探針-ナノドットの磁気的作用を反映した明瞭なコントラストが認められることからスピン保持ノードとしても機能することを明らかにした。","subitem_description_language":"ja","subitem_description_type":"Abstract"},{"subitem_description":"CoPt-alloy NDs with an areal density as high as 〜10^<12> cm^<-2> and over on thermally-grown SiO_2 were successfully fabricated by remote H_2 plasma exposure to ultrathin Pt/Co bi-layer stack, which was confirmed after examining the surface morphology by AFM and measuring photoemission spectra. After scanning the CoPt-alloy NDs with a AFM tip biased at -2.0 V with respect to the substrate, a distinct decrease in the surface potential (-30 mV) in the corresponding area owing to electron charging to the dots was detected, which indicates that NDs were electrically isolated from each other. In the MFM image taken in the noncontact tapping mode with a distance of 〜10 nm between the tip and the sample surface, a clear contrast was obtained with a good correlation to the NDs indicating the presence of perpendicular magnetic anisotropy of the CoPt-alloy NDs. These results imply that CoPt-alloy NDs can be active elements for both spin and charge storage.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"URI","subitem_identifier_uri":"http://ci.nii.ac.jp/naid/110009779101/"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/23596"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"一般社団法人電子情報通信学会","subitem_publisher_language":"ja"}]},"item_10_relation_43":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://ci.nii.ac.jp/naid/110009779101/","subitem_relation_type_select":"URI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである","subitem_rights_language":"ja"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0913-5685","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"牧原, 克典","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62424","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"福岡, 諒","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62425","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"張, 海","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62426","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"壁谷, 悠希","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62427","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大田, 晃生","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62428","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"宮崎, 誠一","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"62429","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makihara, Katsunori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62430","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fukuoka, Ryo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62431","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zhang, Hai","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62432","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kabeya, Yuuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62433","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohta, Akio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62434","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Miyazaki, Seiichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"62435","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"110009779101.pdf","filesize":[{"value":"653.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"110009779101.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/21467/files/110009779101.pdf"},"version_id":"d3fb0926-16fd-40b7-88da-c7ddad08ebe2"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"CoPt合金","subitem_subject_scheme":"Other"},{"subitem_subject":"ナノドット","subitem_subject_scheme":"Other"},{"subitem_subject":"リモート水素プラズマ","subitem_subject_scheme":"Other"},{"subitem_subject":"KFM","subitem_subject_scheme":"Other"},{"subitem_subject":"MFM","subitem_subject_scheme":"Other"},{"subitem_subject":"PtCo Alloy","subitem_subject_scheme":"Other"},{"subitem_subject":"Nanodots","subitem_subject_scheme":"Other"},{"subitem_subject":"Remote H2 Plasma","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"リモートH_2プラズマ支援によるCoPtナノドットの高密度形成と帯電・帯磁特性評価(高誘電率膜,界面制御,メモリ技術,ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"リモートH_2プラズマ支援によるCoPtナノドットの高密度形成と帯電・帯磁特性評価(高誘電率膜,界面制御,メモリ技術,ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)","subitem_title_language":"ja"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-02-24"},"publish_date":"2016-02-24","publish_status":"0","recid":"21467","relation_version_is_last":true,"title":["リモートH_2プラズマ支援によるCoPtナノドットの高密度形成と帯電・帯磁特性評価(高誘電率膜,界面制御,メモリ技術,ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:10:40.602824+00:00"}