{"created":"2021-03-01T06:29:20.147304+00:00","id":21646,"links":{},"metadata":{"_buckets":{"deposit":"f7a0a172-a64f-4cb3-9ced-6ccaf11c7665"},"_deposit":{"id":"21646","owners":[],"pid":{"revision_id":0,"type":"depid","value":"21646"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00021646","sets":["320:321:322"]},"author_link":["63791","63792","63793","63794","63795","63796","63797","63798","63799","63800","63801","63802"],"item_10_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Nano-watt demonstration of single-flux-quantum circuits","subitem_alternative_title_language":"en"}]},"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-07","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"130","bibliographicPageEnd":"58","bibliographicPageStart":"53","bibliographicVolumeNumber":"111","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会技術研究報告. SCE, 超伝導エレクトロニクス","bibliographic_titleLang":"ja"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"我々は電源電圧V_bを小さくすることで消費電力を低減したシフトレジスタの動作実証を行った。本研究で試作したシフトレジスタは動作速度が7.5〜20GHzでありながら、消費電力が数nWとなった。V_bを低減化することで、回路の電流を制御しているでの消費電力も小さくなる。加えてV_bを小さくするとジョセフソン接合(JJ)がスイッチしている間にJJに並列に挿入されているシャント抵抗R_sに供給される電流が急峻に減少するといった現象が生じる。その結果R_sでの消費電力も小さくなる。従来のSFQ回路に比べて電力遅延積では約70倍、エネルギー遅延積では13倍以上向上した。本研究で試作したシフトレジスタのエネルギー遅延積は5桁優れていることから冷凍機の消費電力を考慮しても半導体に対して優位性があると考える。 ","subitem_description_language":"ja","subitem_description_type":"Abstract"},{"subitem_description":"We have demonstrated rapid-single-flux-quantum (RSFQ) circuits with reduced power consumptions by lowering bias voltages and critical currents. The power consumption including a power consumption of a bias resistor is measured to be around 1 nW/JJ in 8-bit shift registers, while the operating frequency ranges from 7.5 GHz to 20 GHz. we lower bias voltages applied to RSFQ circuits. The values of bias resistances are proportional to bias voltages. At lowered bias voltages, the power consumption of the bias resistor is reduced. When a voltage begins to be generated at a Josephson junction, the net current provided to the junction and to the shunt resistor is decreased. As a result, the magnitude of the voltage is suppressed, and the power consumption of the shunt resistor is reduced. The power energy-delay product is about 70 times smaller and the the energy-delay product is more than 13 times smaller than that of the conventional RSFQ circuits. Low poewer SFQ circuits are superior in terms of energy-delay product to semiconductor circuits though the power consumption of SFQ cicuits contains the refrigerating machine.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"(超伝導マイクロ波応用,信号処理基盤技術及びその応用,一般)","subitem_description_language":"ja","subitem_description_type":"Other"},{"subitem_description":"IEICE Technical Report;SCE2011-10","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"URI","subitem_identifier_uri":"http://ci.nii.ac.jp/naid/110008800745/"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/23794"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"一般社団法人電子情報通信学会","subitem_publisher_language":"ja"}]},"item_10_relation_40":{"attribute_name":"シリーズ","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"IEICE Technical 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access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"北山, 敦史","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"63791","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"伊藤, 将人","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"63792","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"纐纈, 智仁","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"63793","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"楠本, 哲也","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"63794","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 雅光","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"63795","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"藤巻, 朗","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"63796","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"KITAYAMA, Atsushi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"63797","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"ITO, Masato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"63798","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"KOUKETSU, Tomohito","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"63799","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"KUSUMOTO, Tetsuya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"63800","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"TANAKA, Masamitsu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"63801","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"FUJIMAKI, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"63802","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"110008800745.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"110008800745.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/21646/files/110008800745.pdf"},"version_id":"a9ae7f01-3854-4ce2-b970-f34b98c2e29d"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"単一磁束量子(SFQ)量子回路","subitem_subject_scheme":"Other"},{"subitem_subject":"低消費電力","subitem_subject_scheme":"Other"},{"subitem_subject":"シフトレジスタ","subitem_subject_scheme":"Other"},{"subitem_subject":"Single−flux−quantum circuit","subitem_subject_scheme":"Other"},{"subitem_subject":"Low power consumption","subitem_subject_scheme":"Other"},{"subitem_subject":"Shift register","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"消費電力数nWの単一磁束量子回路の動作実証","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"消費電力数nWの単一磁束量子回路の動作実証","subitem_title_language":"ja"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-03-09"},"publish_date":"2016-03-09","publish_status":"0","recid":"21646","relation_version_is_last":true,"title":["消費電力数nWの単一磁束量子回路の動作実証"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:10:54.662283+00:00"}