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  1. B200 工学部/工学研究科
  2. B200d 学位論文
  3. 博士論文(工博・論工博)

High quality 4H-SiC crystal growth and dislocations behavior during solution method

http://hdl.handle.net/2237/25056
http://hdl.handle.net/2237/25056
86f065f7-090e-4e86-98a8-afb760d2e0b8
名前 / ファイル ライセンス アクション
k11594_thesis.pdf k11594_thesis.pdf (8.1 MB)
k11594_abstract.pdf k11594_abstract.pdf (1.8 MB)
k11594_review.pdf k11594_review.pdf (1.1 MB)
Item type 学位論文 / Thesis or Dissertation(1)
公開日 2016-11-18
タイトル
タイトル High quality 4H-SiC crystal growth and dislocations behavior during solution method
言語 en
その他のタイトル
その他のタイトル 溶液法における高品質4H-SiC成長および欠陥挙動
言語 ja
著者 XIAO, Shiyu

× XIAO, Shiyu

WEKO 67282

en XIAO, Shiyu

Search repository
肖, 世玉

× 肖, 世玉

WEKO 67283

ja 肖, 世玉

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
言語
言語 eng
資源タイプ
資源 http://purl.org/coar/resource_type/c_db06
タイプ doctoral thesis
書誌情報
発行日 2016-09-27
学位名
言語 ja
学位名 博士(工学)
学位授与機関
学位授与機関識別子Scheme kakenhi
学位授与機関識別子 13901
言語 ja
学位授与機関名 名古屋大学
言語 en
学位授与機関名 Nagoya University
学位授与年度
学位授与年度 2016
学位授与年月日
学位授与年月日 2016-09-27
学位授与番号
学位授与番号 甲第11594号
著者版フラグ
値 ETD
URI
識別子 http://hdl.handle.net/2237/25056
識別子タイプ HDL
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