@article{oai:nagoya.repo.nii.ac.jp:00022882,
 author = {Ghodke, Swapnil and Hiroishi, Naoya and Yamamoto, Akio and Ikuta, Hiroshi and Matsunami, Masaharu and Takeuchi, Tsunehiro},
 issue = {10},
 journal = {Journal of Electronic Materials},
 month = {Oct},
 note = {We have investigated the effect of heavy-element (W) substitution on the thermoelectric properties of higher manganese silicide (HMS). Samples were prepared by arc melting followed by liquid quenching, where the latter assisted in achieving higher solubility for tungsten. We observed that Mn34.6W1.8Si63.6 was a p-type material, whereas simultaneous substitution of 12 at.% Fe made the higher manganese silicide an n-type material. The optimal carrier concentration was obtained by simultaneous substitution of Fe and W for Mn atoms. Although the samples were metastable, we successfully obtained bulk samples by a low-temperature (970 K), high-pressure (>100 MPa), long-duration sintering process. The lattice thermal conductivity was effectively reduced by W substitution, and the ZT value was improved to above 0.5 for both n- and p-type samples.},
 pages = {5279--5284},
 title = {Enhanced Thermoelectric Properties of W- and Fe-Substituted MnSiγ},
 volume = {45},
 year = {2016}
}