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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Sequential control of step-bunching during graphene growth on SiC (0001)

http://hdl.handle.net/2237/25172
http://hdl.handle.net/2237/25172
5b1196fb-4407-4c43-8e19-d98940967ee2
名前 / ファイル ライセンス アクション
1_4961630.pdf 1_4961630.pdf ファイル公開:2017/08/25 (3.5 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-12-09
タイトル
タイトル Sequential control of step-bunching during graphene growth on SiC (0001)
言語 en
著者 Bao, Jianfeng

× Bao, Jianfeng

WEKO 67900

en Bao, Jianfeng

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Yasui, Osamu

× Yasui, Osamu

WEKO 67901

en Yasui, Osamu

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Norimatsu, Wataru

× Norimatsu, Wataru

WEKO 67902

en Norimatsu, Wataru

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Matsuda, Keita

× Matsuda, Keita

WEKO 67903

en Matsuda, Keita

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Kusunoki, Michiko

× Kusunoki, Michiko

WEKO 67904

en Kusunoki, Michiko

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (APPLIED PHYSICS LETTERS. v.109, 2016, p.081602) and may be found at (http://dx.doi.org/10.1063/1.4961630).
抄録
内容記述 We have investigated the relation between the step-bunching and graphene growth phenomena on an SiC substrate. We found that only a minimum amount of step-bunching occurred during the graphene growth process with a high heating rate. On the other hand, a large amount of step-bunching occurred using a slow heating process. These results indicated that we can control the degree of step-bunching during graphene growth by controlling the heating rate. We also found that graphene coverage suppressed step bunching, which is an effective methodology not only in the graphene technology but also in the SiC-based power electronics.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 AIP Publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.4961630
ISSN
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : APPLIED PHYSICS LETTERS

巻 109, p. 081602-081602, 発行日 2016-08-25
著者版フラグ
値 publisher
URI
識別子 http://dx.doi.org/10.1063/1.4961630
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/25172
識別子タイプ HDL
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