{"created":"2021-03-01T06:30:48.164826+00:00","id":22988,"links":{},"metadata":{"_buckets":{"deposit":"c381948c-c407-4be1-a53b-4e52a31435e2"},"_deposit":{"id":"22988","owners":[],"pid":{"revision_id":0,"type":"depid","value":"22988"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00022988","sets":["320:321:322"]},"author_link":["67900","67901","67902","67903","67904"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-08-25","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"081602","bibliographicPageStart":"081602","bibliographicVolumeNumber":"109","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have investigated the relation between the step-bunching and graphene growth phenomena on an SiC substrate. We found that only a minimum amount of step-bunching occurred during the graphene growth process with a high heating rate. On the other hand, a large amount of step-bunching occurred using a slow heating process. These results indicated that we can control the degree of step-bunching during graphene growth by controlling the heating rate. We also found that graphene coverage suppressed step bunching, which is an effective methodology not only in the graphene technology but also in the SiC-based power electronics.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://dx.doi.org/10.1063/1.4961630"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/25172"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.4961630","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (APPLIED PHYSICS LETTERS. v.109, 2016, p.081602) and may be found at (http://dx.doi.org/10.1063/1.4961630).","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Bao, Jianfeng","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"67900","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yasui, Osamu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"67901","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Norimatsu, Wataru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"67902","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Matsuda, Keita","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"67903","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kusunoki, Michiko","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"67904","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-08-25"}],"displaytype":"detail","filename":"1_4961630.pdf","filesize":[{"value":"3.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"1_4961630.pdf ファイル公開：2017/08/25","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/22988/files/1_4961630.pdf"},"version_id":"86e8f1f6-d367-451c-a81a-c64463b9face"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Sequential control of step-bunching during graphene growth on SiC (0001)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Sequential control of step-bunching during graphene growth on SiC (0001)","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-12-09"},"publish_date":"2016-12-09","publish_status":"0","recid":"22988","relation_version_is_last":true,"title":["Sequential control of step-bunching during graphene growth on SiC (0001)"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:12:38.166108+00:00"}