{"created":"2021-03-01T06:30:49.961533+00:00","id":23015,"links":{},"metadata":{"_buckets":{"deposit":"b049a43b-fc4d-4287-b2ec-65588224a13d"},"_deposit":{"id":"23015","owners":[],"pid":{"revision_id":0,"type":"depid","value":"23015"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00023015","sets":["336:695:696"]},"author_link":["68016","68017","68018","68019","68020","68021","68022"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-09-26","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"13","bibliographicPageEnd":"133101","bibliographicPageStart":"133101","bibliographicVolumeNumber":"109","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Monolayer niobium diselenide (NbSe2) is prepared through molecular beam epitaxy with hexagonal boron nitride (hBN) as substrates. Atomic force microscopy and the Raman spectroscopy have shown that the monolayer NbSe2 grown on the hBN possesses triangular or truncated triangular shape whose lateral size amounts up to several hundreds of nanometers. We have found that the precisely controlled supply rate and ultraflat surface of hBN plays an important role in the growth of the monolayer NbSe2.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://dx.doi.org/10.1063/1.4963178"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/25202"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.4963178","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (APPLIED PHYSICS LETTERS. v.109, n.13, 2016, p.133101) and may be found at (http://dx.doi.org/10.1063/1.4963178).","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hotta, Takato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68016","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tokuda, Takuto","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68017","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zhao, Sihan","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68018","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Watanabe, Kenji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68019","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Taniguchi, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68020","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinohara, Hisanori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68021","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kitaura, Ryo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68022","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-09-26"}],"displaytype":"detail","filename":"1_4963178.pdf","filesize":[{"value":"2.6 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"1_4963178.pdf ファイル公開：2017/09/26","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/23015/files/1_4963178.pdf"},"version_id":"2740695a-b63a-4de3-ad8f-10068895e29e"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Molecular beam epitaxy growth of monolayer niobium diselenide flakes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Molecular beam epitaxy growth of monolayer niobium diselenide flakes","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["696"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-12-15"},"publish_date":"2016-12-15","publish_status":"0","recid":"23015","relation_version_is_last":true,"title":["Molecular beam epitaxy growth of monolayer niobium diselenide flakes"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:12:24.180033+00:00"}