@article{oai:nagoya.repo.nii.ac.jp:00023079,
 author = {Hanaoka, M. and Kaneda, H. and Oyabu, S. and Yamagishi, M. and Hattori, Y. and Ukai, S. and Shichi, K. and Wada, T. and Suzuki, T. and Watanabe, K. and Nagase, K. and Baba, S. and Kochi, C.},
 issue = {1},
 journal = {Journal of Low Temperature Physics},
 month = {Jul},
 note = {We report the current status of the development of our new detectors for far-infrared (FIR) astronomy. We develop Blocked-Impurity-Band (BIB)-type Ge detectors to realize large-format compact arrays covering a wide FIR wavelength range up to 200 μm. We fabricated Ge junction devices of different physical parameters with a BIB-type structure, using the room temperature, surface-activated wafer bonding (SAB) method. We measured the absolute responsivity and the spectral response curve of each device at low temperatures, using an internal blackbody source in a cryostat and a Fourier transform spectrometer, respectively. The results show that the SAB Ge junction devices have significantly higher absolute responsivities and longer cut-off wavelengths of the spectral response than the conventional bulk Ge:Ga device. Based upon the results, we discuss the optimum parameters of SAB Ge junction devices for FIR detectors. We conclude that SAB Ge junction devices possess a promising applicability to next-generation FIR detectors covering wavelengths up to ∼200 μm with high responsivity. As a next step, we plan to fabricate a BIB-type Ge array device in combination with a low-power cryogenic readout integrated circuit.},
 pages = {225--230},
 title = {Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy},
 volume = {184},
 year = {2016}
}