{"created":"2021-03-01T06:30:54.209020+00:00","id":23079,"links":{},"metadata":{"_buckets":{"deposit":"00b297e3-4308-49d1-b1bf-dc9a4bf354f8"},"_deposit":{"id":"23079","owners":[],"pid":{"revision_id":0,"type":"depid","value":"23079"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00023079","sets":["336:695:696"]},"author_link":["68376","68377","68378","68379","68380","68381","68382","68383","68384","68385","68386","68387","68388"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-07","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"230","bibliographicPageStart":"225","bibliographicVolumeNumber":"184","bibliographic_titles":[{"bibliographic_title":"Journal of Low Temperature Physics","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We report the current status of the development of our new detectors for far-infrared (FIR) astronomy. We develop Blocked-Impurity-Band (BIB)-type Ge detectors to realize large-format compact arrays covering a wide FIR wavelength range up to 200 μm. We fabricated Ge junction devices of different physical parameters with a BIB-type structure, using the room temperature, surface-activated wafer bonding (SAB) method. We measured the absolute responsivity and the spectral response curve of each device at low temperatures, using an internal blackbody source in a cryostat and a Fourier transform spectrometer, respectively. The results show that the SAB Ge junction devices have significantly higher absolute responsivities and longer cut-off wavelengths of the spectral response than the conventional bulk Ge:Ga device. Based upon the results, we discuss the optimum parameters of SAB Ge junction devices for FIR detectors. We conclude that SAB Ge junction devices possess a promising applicability to next-generation FIR detectors covering wavelengths up to ∼200 μm with high responsivity. As a next step, we plan to fabricate a BIB-type Ge array device in combination with a low-power cryogenic readout integrated circuit.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://doi.org/10.1007/s10909-016-1484-1"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/25269"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Springer","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1007/s10909-016-1484-1","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"The final publication is available at Springer via http://doi.org/10.1007/s10909-016-1484-1","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0022-2291","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hanaoka, M.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68376","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kaneda, H.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68377","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Oyabu, S.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68378","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamagishi, M.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68379","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hattori, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68380","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ukai, S.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68381","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shichi, K.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68382","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Wada, T.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68383","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Suzuki, T.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68384","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Watanabe, K.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68385","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nagase, K.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68386","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Baba, S.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68387","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kochi, C.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68388","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-07-01"}],"displaytype":"detail","filename":"Hanaoka2016.pdf","filesize":[{"value":"927.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Hanaoka2016.pdf ファイル公開：2017/07/01","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/23079/files/Hanaoka2016.pdf"},"version_id":"aa674f90-6eec-43b0-993c-4eaf7cf1bbb0"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Instrument","subitem_subject_scheme":"Other"},{"subitem_subject":"Far-infrared detector","subitem_subject_scheme":"Other"},{"subitem_subject":"Ge photoconductor","subitem_subject_scheme":"Other"},{"subitem_subject":"Blocked-Impurity-Band detector","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["696"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-12-20"},"publish_date":"2016-12-20","publish_status":"0","recid":"23079","relation_version_is_last":true,"title":["Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:12:46.549076+00:00"}