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Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process
http://hdl.handle.net/2237/25276
http://hdl.handle.net/2237/252765e7c8fda-2b3f-4059-92e6-d801b9f49bb0
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
SP15023.pdf ファイル公開：2017/08/01 (3.3 MB)
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2016-12-20 | |||||
| タイトル | ||||||
| タイトル | Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process | |||||
| 言語 | en | |||||
| 著者 |
Kurosawa, Masashi
× Kurosawa, Masashi× Ohta, Akio× Araidai, Masaaki× Zaima, Shigeaki |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 権利情報 | © 2016 The Japan Society of Applied Physics | |||||
| 言語 | en | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We have developed a new method of growing Si or Ge ultrathin films on a Ag(111) surface by using a Ag-induced layer exchange (ALEX) process toward the creation of 2D honeycomb sheets of Si and Ge, known as silicene and germanene, respectively. In the present paper, we clarify ALEX features, specifically the surface segregation of Si (or Ge) atoms from the underlying substrate, focusing on the annealing temperature and time. Hard X-ray photoelectron spectroscopy analyses demonstrate that surface-segregated Si (or Ge) exists on the Ag surfaces after the epitaxial growth of the Ag layer on Si(111) [or Ge(111)] substrates; the amount of segregated Si (or Ge) can be controlled by a subsequent annealing. Also, we find that the segregation of an ultrathin Si or Ge layer proceeds at an interface between Ag and the AlO x capping layer. | |||||
| 言語 | en | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Article Published 5 July 2016 | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | IOP publishing | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.7567/JJAP.55.08NB07 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0021-4922 | |||||
| 書誌情報 |
en : Japanese Journal of Applied Physics 巻 55, 号 8S1, p. 08NB07-08NB07, 発行日 2016-08 |
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| 著者版フラグ | ||||||
| 値 | author | |||||
| URI | ||||||
| 識別子 | http://dx.doi.org/10.7567/JJAP.55.08NB07 | |||||
| 識別子タイプ | DOI | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/25276 | |||||
| 識別子タイプ | HDL | |||||
