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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process

http://hdl.handle.net/2237/25276
http://hdl.handle.net/2237/25276
5e7c8fda-2b3f-4059-92e6-d801b9f49bb0
名前 / ファイル ライセンス アクション
SP15023.pdf SP15023.pdf ファイル公開:2017/08/01 (3.3 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-12-20
タイトル
タイトル Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process
言語 en
著者 Kurosawa, Masashi

× Kurosawa, Masashi

WEKO 68414

en Kurosawa, Masashi

Search repository
Ohta, Akio

× Ohta, Akio

WEKO 68415

en Ohta, Akio

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Araidai, Masaaki

× Araidai, Masaaki

WEKO 68416

en Araidai, Masaaki

Search repository
Zaima, Shigeaki

× Zaima, Shigeaki

WEKO 68417

en Zaima, Shigeaki

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 © 2016 The Japan Society of Applied Physics
抄録
内容記述 We have developed a new method of growing Si or Ge ultrathin films on a Ag(111) surface by using a Ag-induced layer exchange (ALEX) process toward the creation of 2D honeycomb sheets of Si and Ge, known as silicene and germanene, respectively. In the present paper, we clarify ALEX features, specifically the surface segregation of Si (or Ge) atoms from the underlying substrate, focusing on the annealing temperature and time. Hard X-ray photoelectron spectroscopy analyses demonstrate that surface-segregated Si (or Ge) exists on the Ag surfaces after the epitaxial growth of the Ag layer on Si(111) [or Ge(111)] substrates; the amount of segregated Si (or Ge) can be controlled by a subsequent annealing. Also, we find that the segregation of an ultrathin Si or Ge layer proceeds at an interface between Ag and the AlO x capping layer.
言語 en
内容記述タイプ Abstract
内容記述
内容記述 Article Published 5 July 2016
言語 en
内容記述タイプ Other
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.7567/JJAP.55.08NB07
ISSN
収録物識別子タイプ PISSN
収録物識別子 0021-4922
書誌情報 en : Japanese Journal of Applied Physics

巻 55, 号 8S1, p. 08NB07-08NB07, 発行日 2016-08
著者版フラグ
値 author
URI
識別子 http://dx.doi.org/10.7567/JJAP.55.08NB07
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/25276
識別子タイプ HDL
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