{"created":"2021-03-01T06:30:54.664926+00:00","id":23086,"links":{},"metadata":{"_buckets":{"deposit":"cc0986d3-450d-4481-a4dc-b6a21fcffb3d"},"_deposit":{"id":"23086","owners":[],"pid":{"revision_id":0,"type":"depid","value":"23086"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00023086","sets":["673:674:675"]},"author_link":["68414","68415","68416","68417"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8S1","bibliographicPageEnd":"08NB07","bibliographicPageStart":"08NB07","bibliographicVolumeNumber":"55","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have developed a new method of growing Si or Ge ultrathin films on a Ag(111) surface by using a Ag-induced layer exchange (ALEX) process toward the creation of 2D honeycomb sheets of Si and Ge, known as silicene and germanene, respectively. In the present paper, we clarify ALEX features, specifically the surface segregation of Si (or Ge) atoms from the underlying substrate, focusing on the annealing temperature and time. Hard X-ray photoelectron spectroscopy analyses demonstrate that surface-segregated Si (or Ge) exists on the Ag surfaces after the epitaxial growth of the Ag layer on Si(111) [or Ge(111)] substrates; the amount of segregated Si (or Ge) can be controlled by a subsequent annealing. Also, we find that the segregation of an ultrathin Si or Ge layer proceeds at an interface between Ag and the AlO x capping layer.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Article Published 5 July 2016","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://dx.doi.org/10.7567/JJAP.55.08NB07"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/25276"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/JJAP.55.08NB07","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2016 The Japan Society of Applied Physics","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-4922","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kurosawa, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68414","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohta, Akio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68415","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Araidai, Masaaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68416","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zaima, Shigeaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68417","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-08-01"}],"displaytype":"detail","filename":"SP15023.pdf","filesize":[{"value":"3.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"SP15023.pdf ファイル公開：2017/08/01","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/23086/files/SP15023.pdf"},"version_id":"a942930c-ed80-4ae8-9952-e94a386e7027"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-12-20"},"publish_date":"2016-12-20","publish_status":"0","recid":"23086","relation_version_is_last":true,"title":["Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:12:45.799616+00:00"}