@article{oai:nagoya.repo.nii.ac.jp:00023089,
 author = {Ike, Shinichi and Simoen, Eddy and Shimura, Yosuke and Hikavyy, Andriy and Vandervorst, Wilfried and Loo, Roger and Takeuchi, Wakana and Nakatsuka, Osamu and Zaima, Shigeaki},
 issue = {4S},
 journal = {Japanese Journal of Applied Physics},
 month = {Apr},
 note = {We have investigated the structural and electrical properties of n-type doped Si1− x Ge x epitaxial layers (x = 24–26%) grown by chemical vapor deposition with conventional [SiH2Cl2 (DCS)/GeH4] and high-order (Si2H6/Ge2H6) precursor combinations. X-ray diffraction, atomic force microscopy, and deep-level transient spectroscopy (DLTS) measurements were performed for characterization. The crystalline properties and surface morphology of the Si1− x Ge x layer with Si2H6/Ge2H6 grown at temperatures as low as 550 °C show good structural quality similar to that with DCS/GeH4 grown at 615 °C. On the other hand, in terms of electrical properties, the DLTS measurement reveals the existence of vacancy-related complexes in the as-grown layer with Si2H6/Ge2H6. We found that post-deposition annealing at 200 °C for the Si1− x Ge x epitaxial layer is effective for annihilating vacancy-related defects with densities down to as low as that of conventional precursors.},
 pages = {04EJ11--04EJ11},
 title = {Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects},
 volume = {55},
 year = {2016}
}