{"created":"2021-03-01T06:30:54.861395+00:00","id":23089,"links":{},"metadata":{"_buckets":{"deposit":"812ab5ea-dd5c-45f8-8d30-2392e660d82d"},"_deposit":{"id":"23089","owners":[],"pid":{"revision_id":0,"type":"depid","value":"23089"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00023089","sets":["320:321:322"]},"author_link":["68432","68433","68434","68435","68436","68437","68438","68439","68440"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-04","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4S","bibliographicPageEnd":"04EJ11","bibliographicPageStart":"04EJ11","bibliographicVolumeNumber":"55","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have investigated the structural and electrical properties of n-type doped Si1− x Ge x epitaxial layers (x = 24–26%) grown by chemical vapor deposition with conventional [SiH2Cl2 (DCS)/GeH4] and high-order (Si2H6/Ge2H6) precursor combinations. X-ray diffraction, atomic force microscopy, and deep-level transient spectroscopy (DLTS) measurements were performed for characterization. The crystalline properties and surface morphology of the Si1− x Ge x layer with Si2H6/Ge2H6 grown at temperatures as low as 550 °C show good structural quality similar to that with DCS/GeH4 grown at 615 °C. On the other hand, in terms of electrical properties, the DLTS measurement reveals the existence of vacancy-related complexes in the as-grown layer with Si2H6/Ge2H6. We found that post-deposition annealing at 200 °C for the Si1− x Ge x epitaxial layer is effective for annihilating vacancy-related defects with densities down to as low as that of conventional precursors.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://dx.doi.org/10.7567/JJAP.55.04EJ11"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/25279"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/JJAP.55.04EJ11","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2016 The Japan Society of Applied Physics","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-4922","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ike, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68432","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Simoen, Eddy","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68433","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shimura, Yosuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68434","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hikavyy, Andriy","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68435","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Vandervorst, Wilfried","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68436","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Loo, Roger","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68437","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeuchi, Wakana","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68438","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakatsuka, Osamu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68439","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zaima, Shigeaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"68440","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-04-01"}],"displaytype":"detail","filename":"JJAP_Ike_Merged_SS15181.pdf","filesize":[{"value":"969.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JJAP_Ike_Merged_SS15181.pdf ファイル公開：2017/04/01","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/23089/files/JJAP_Ike_Merged_SS15181.pdf"},"version_id":"0ed233f2-a3f2-45b9-a3a9-48d0879d39e7"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-12-21"},"publish_date":"2016-12-21","publish_status":"0","recid":"23089","relation_version_is_last":true,"title":["Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:12:47.976458+00:00"}