{"_buckets": {"deposit": "24f1e609-adb5-47df-aff8-b37a1c2c06c5"}, "_deposit": {"id": "23090", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "23090"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00023090", "sets": ["322"]}, "author_link": ["68441", "68442", "68443", "68444", "68445", "68446", "68447", "68448"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2016-04", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "4S", "bibliographicPageEnd": "04EB13", "bibliographicPageStart": "04EB13", "bibliographicVolumeNumber": "55", "bibliographic_titles": [{"bibliographic_title": "Japanese Journal of Applied Physics", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We examined the molecular beam epitaxy of Ge1− x Sn x with in situ Sb doping on Ge substrates. The effects of Sb doping on the crystalline and electrical characteristics of Ge1− x Sn x epitaxial layer were investigated in detail. We found that Sb doping with a concentration of 1020 cm−3 remarkably improves the crystallinity, and surface uniformity of the Ge1− x Sn x epitaxial layer by changing the growth mode by the surfactant effect of Sb atoms. Low-temperature Ge1− x Sn x growth with in situ Sb doping realizes a very high electron concentration of 1020 cm−3, which is above the thermal equilibrium solid solubility, as a result of suppressing Sb segregation and precipitation.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.7567/JJAP.55.04EB13"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/25280"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.7567/JJAP.55.04EB13", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2016 The Japan Society of Applied Physics", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Jeon, Jihee", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68441", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Asano, Takanori", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68442", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Shimura, Yosuke", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68443", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takeuchi, Wakana", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68444", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kurosawa, Masashi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68445", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sakashita, Mitsuo", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68446", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nakatsuka, Osamu", "creatorNameLang": "en"}], 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"言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1− x Sn x epitaxial layer", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1− x Sn x epitaxial layer", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/25280", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-12-21"}, "publish_date": "2016-12-21", "publish_status": "0", "recid": "23090", "relation": {}, "relation_version_is_last": true, "title": ["Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1− x Sn x epitaxial layer"], "weko_shared_id": -1}