@article{oai:nagoya.repo.nii.ac.jp:00023090,
 author = {Jeon, Jihee and Asano, Takanori and Shimura, Yosuke and Takeuchi, Wakana and Kurosawa, Masashi and Sakashita, Mitsuo and Nakatsuka, Osamu and Zaima, Shigeaki},
 issue = {4S},
 journal = {Japanese Journal of Applied Physics},
 month = {Apr},
 note = {We examined the molecular beam epitaxy of Ge1− x Sn x with in situ Sb doping on Ge substrates. The effects of Sb doping on the crystalline and electrical characteristics of Ge1− x Sn x epitaxial layer were investigated in detail. We found that Sb doping with a concentration of 1020 cm−3 remarkably improves the crystallinity, and surface uniformity of the Ge1− x Sn x epitaxial layer by changing the growth mode by the surfactant effect of Sb atoms. Low-temperature Ge1− x Sn x growth with in situ Sb doping realizes a very high electron concentration of 1020 cm−3, which is above the thermal equilibrium solid solubility, as a result of suppressing Sb segregation and precipitation.},
 pages = {04EB13--04EB13},
 title = {Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1− x Sn x epitaxial layer},
 volume = {55},
 year = {2016}
}