@article{oai:nagoya.repo.nii.ac.jp:00023091,
 author = {Suzuki, Akihiro and Nakatsuka, Osamu and Shibayama, Shigehisa and Sakashita, Mitsuo and Takeuchi, Wakana and Kurosawa, Masashi and Zaima, Shigeaki},
 issue = {4S},
 journal = {Japanese Journal of Applied Physics},
 month = {Apr},
 note = {We examined the epitaxial growth of an ultrahigh-Sn-content Ge1− x Sn x layer on a Ge substrate and investigated the impact of a Ge1− x Sn x interlayer on the Schottky barrier height (SBH) of the metal/Ge contact. In this study, we considered guidelines of the strain energy and growth temperature to realize a high-Sn-content Ge1− x Sn x layer while keeping the epitaxial growth and suppressing the Sn precipitation. By reducing the film thickness and keeping a low growth temperature, we formed an atomically flat and uniform Ge1− x Sn x epitaxial layer with a Sn content up to 46% on a Ge(001) substrate. We also performed the current density–voltage measurement for Al/Ge1− x Sn x /n-Ge Schottky diodes to estimate the SBH. We found that the SBH of Al/Ge1− x Sn x /n-Ge contact decreases with increasing Sn content in the Ge1− x Sn x interlayer. The shift of the pinning position towards the conduction band edge of Ge is one of the reasons for the SBH reduction of Al/Ge1− x Sn x /n-Ge contact because the valence band edge of Ge1− x Sn x would rise as the Sn content increases.},
 pages = {04EB12--04EB12},
 title = {Growth of ultrahigh-Sn-content Ge1− x Sn x epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact},
 volume = {55},
 year = {2016}
}