@article{oai:nagoya.repo.nii.ac.jp:00023332,
 author = {Taguchi, Katsuhisa and Xu, Dong-Hui and Yamakage, Ai and Law, K. T.},
 journal = {Physical Review B},
 month = {Oct},
 note = {We study theoretically the circularly polarized light-induced Floquet state in line-node semimetals with time-reversal symmetry and inversion symmetry. It is found that the Floquet state can show the photovoltaic anomalous Hall effect when an applied circularly polarized light creates a gap in the line node in the bulk and leaves Weyl point nodes. The Hall conductivity is sensitive to the location of the Fermi level: When the Fermi level is located at the node, the Hall conductivity depends on the radius of the line node and is nearly independent of the intensity of the light. Far from the line node, the Hall conductivity is dependent on the intensity of the light. The sensitive Fermi-level dependence of the Hall conductivity in the presence of a laser of weak intensity can have applications in phototransistors based on thin films of line-node semimetals.},
 pages = {155206--155206},
 title = {Photovoltaic anomalous Hall effect in line-node semimetals},
 volume = {94},
 year = {2016}
}