@article{oai:nagoya.repo.nii.ac.jp:00023369,
 author = {Wang, Chenxing and Nakahara, Hitoshi and Saito, Yahachi},
 issue = {11},
 journal = {Surface and Interface},
 month = {Nov},
 note = {Thermal decomposition of silicon carbide (SiC) is frequently used for the formation of graphene on semi-insulating substrates, but the growth mechanism is not well understood and thus the method to form monolayer graphene with larger domain size especially on step-free or wide terrace surfaces is not known. In this work, various stages of graphene growth on SiC (0001) during annealing at 1-atm-Ar atmosphere were observed by in situ scanning electron microscopy and scanning tunneling microscopy. We found that a prolonged heating at 1550 °C over 1 h brought about the growth of monolayer graphene, starting from step edges and continuously across the whole terrace without pit formation. Monolayer graphene with the domain size over 3 µm was fabricated on wide terraces, which covered more than 90% areas of the sample surfaces., Proceedings of the 10th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC 2015),Matsue, Japan, 25-30 October 2015},
 pages = {1221--1225},
 title = {In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces},
 volume = {48},
 year = {2016}
}