{"created":"2021-03-01T06:31:13.441366+00:00","id":23369,"links":{},"metadata":{"_buckets":{"deposit":"3eb84807-442b-4617-9d33-d03d4561ee12"},"_deposit":{"id":"23369","owners":[],"pid":{"revision_id":0,"type":"depid","value":"23369"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00023369","sets":["320:321:322"]},"author_link":["69280","69281","69282"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-11","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageEnd":"1225","bibliographicPageStart":"1221","bibliographicVolumeNumber":"48","bibliographic_titles":[{"bibliographic_title":"Surface and Interface","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Thermal decomposition of silicon carbide (SiC) is frequently used for the formation of graphene on semi-insulating substrates, but the growth mechanism is not well understood and thus the method to form monolayer graphene with larger domain size especially on step-free or wide terrace surfaces is not known. In this work, various stages of graphene growth on SiC (0001) during annealing at 1-atm-Ar atmosphere were observed by in situ scanning electron microscopy and scanning tunneling microscopy. We found that a prolonged heating at 1550 °C over 1 h brought about the growth of monolayer graphene, starting from step edges and continuously across the whole terrace without pit formation. Monolayer graphene with the domain size over 3 µm was fabricated on wide terraces, which covered more than 90% areas of the sample surfaces.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Proceedings of the 10th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC 2015),Matsue, Japan, 25-30 October 2015","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/25560"},{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://doi.org/10.1002/sia.6098"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Wiley","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1002/sia.6098","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This is the peer reviewed version of the following article: [Wang, C., Nakahara, H., and Saito, Y. (2016) In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces. Surf. Interface Anal., 48: 1221–1225. doi: 10.1002/sia.6098.], which has been published in final form at [http://doi.org/10.1002/sia.6098]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0142-2421","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Wang, Chenxing","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"69280","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakahara, Hitoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"69281","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Saito, Yahachi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"69282","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-11-01"}],"displaytype":"detail","filename":"Wang_SIA_2016_pp1221–1225.pdf","filesize":[{"value":"3.8 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Wang_SIA_2016_pp1221–1225.pdf ファイル公開：2017/11/01","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/23369/files/Wang_SIA_2016_pp1221–1225.pdf"},"version_id":"8e0b84f3-c0ed-4995-96bb-21690adee49c"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2017-02-03"},"publish_date":"2017-02-03","publish_status":"0","recid":"23369","relation_version_is_last":true,"title":["In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:13:04.747746+00:00"}