{"created":"2021-03-01T06:31:15.910107+00:00","id":23407,"links":{},"metadata":{"_buckets":{"deposit":"3b0720e8-26a3-4a0f-b1bc-7c2e9607af0f"},"_deposit":{"id":"23407","owners":[],"pid":{"revision_id":0,"type":"depid","value":"23407"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00023407","sets":["320:321:322"]},"author_link":["69417","69418","69419","69420","69421","69422"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1S","bibliographicPageEnd":"01AE01","bibliographicPageStart":"01AE01","bibliographicVolumeNumber":"56","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have studied the formation of Ta nanodots (NDs) on thermally grown SiO2/Si by exposing a thin metal layer to a remote H2 plasma (H2-RP) without external heating. Atomic force microscopy (AFM) analyses show that a combination of a Ge (~30.0 nm)/Ta (~2.0 nm) bilayer stack with subsequent H2-RP exposure is effective for forming electrically isolated Ta NDs with an areal dot density as high as ~1011 cm−2, where the Ge layer plays an important role as a barrier layer against the oxidation of the ultrathin Ta layer surface. The change in the chemical structure of the Ge/Ta bilayer stack on SiO2/Si upon Ta ND formation by H2-RP exposure is investigated by hard X-ray photoemission spectroscopy (HAXPES) and X-ray photoelectron spectroscopy (XPS).","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"https://doi.org/10.7567/JJAP.56.01AE01"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/25601"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/JJAP.56.01AE01","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2017 The Japan Society of Applied Physics","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-4922","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Wang, Yaping","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"69417","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeuchi, Daichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"69418","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohta, Akio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"69419","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ikeda, Mitsuhisa","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"69420","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makihara, Katsunori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"69421","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Miyazaki, Seiichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"69422","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-01"}],"displaytype":"detail","filename":"PL16055Final.pdf","filesize":[{"value":"637.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"PL16055Final.pdf ファイル公開：2018/01/01","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/23407/files/PL16055Final.pdf"},"version_id":"394a7026-6878-4868-bb93-a89d4e7bf2dd"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"High-density formation of Ta nanodot induced by remote hydrogen plasma","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"High-density formation of Ta nanodot induced by remote hydrogen plasma","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2017-02-17"},"publish_date":"2017-02-17","publish_status":"0","recid":"23407","relation_version_is_last":true,"title":["High-density formation of Ta nanodot induced by remote hydrogen plasma"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:13:10.552647+00:00"}