@article{oai:nagoya.repo.nii.ac.jp:00023517,
 author = {Tabata, Akimori},
 journal = {Thin Solid Films},
 month = {Nov},
 note = {We investigated the temperature dependences of the current density–voltage (J − V) and capacitance–frequency (C − f) characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes. The J − V characteristics showed that over the measured temperature range (100–400 K) the carrier transport was governed by diffusion and recombination. Recombination became dominant with decreasing temperature and tunneling did not contribute to the carrier transport. The C − f characteristics showed two relaxation processes dominant at low and high temperatures. The relaxation process dominant at low temperatures had different relaxation times depending on the heterojunction diode, which was caused by shallow states with different densities. The relaxation process dominant at high temperatures had almost the same relaxation times among diodes, which was caused by deep states (0.25–0.27 eV) with almost the same densities.},
 pages = {323--327},
 title = {Temperature dependences of current density–voltage and capacitance–frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes},
 volume = {619},
 year = {2016}
}