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Absolute density of precursor SiH3 radicals and H atoms in H2-diluted SiH4 gas plasma for deposition of microcrystalline silicon films
http://hdl.handle.net/2237/25986
http://hdl.handle.net/2237/2598697682d33-eb98-4162-a640-cb34ed1c18eb
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-04-17 | |||||
タイトル | ||||||
タイトル | Absolute density of precursor SiH3 radicals and H atoms in H2-diluted SiH4 gas plasma for deposition of microcrystalline silicon films | |||||
言語 | en | |||||
著者 |
Abe, Yusuke
× Abe, Yusuke× Ishikawa, Kenji× Takeda, Keigo× Tsutsumi, Takayoshi× Fukushima, Atsushi× Kondo, Hiroki× Sekine, Makoto× Hori, Masaru |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright 2017 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Applied Physics Letters. v.110, n.4, 2017, p.043902) and may be found at (http://dx.doi.org/10.1063/1.4974821). | |||||
抄録 | ||||||
内容記述 | Microcrystalline hydrogenated silicon films were produced at a high deposition rate of about 2 nm/s by using a capacitively coupled plasma under a practical pressure of around 1 kPa. The SiH4 source gas was almost fully dissociated when highly diluted with H2 gas, and the dominant species in the gas phase were found to be SiH3 radicals, which are film-growth precursors, and H atoms. The absolute density of these species was measured as the partial pressure of SiH4 gas was varied. With the increasing SiH4 gas flow rate, the SiH3 radical density, which was on the order of 1012 cm−3, increased linearly, while the H-atom density remained constant at about 1012 cm−3. The film growth mechanism was described in terms of precursors, based on the measured flux of SiH3 radicals and H atoms, and the relative fraction of higher-order radicals. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | AIP Publishing | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.4974821 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌情報 |
en : Applied Physics Letters 巻 110, 号 4, p. 043902-043902, 発行日 2017-01-23 |
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著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://dx.doi.org/10.1063/1.4974821 | |||||
識別子タイプ | DOI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/25986 | |||||
識別子タイプ | HDL |