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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Absolute density of precursor SiH3 radicals and H atoms in H2-diluted SiH4 gas plasma for deposition of microcrystalline silicon films

http://hdl.handle.net/2237/25986
http://hdl.handle.net/2237/25986
97682d33-eb98-4162-a640-cb34ed1c18eb
名前 / ファイル ライセンス アクション
1_2E4974821.pdf 1_2E4974821.pdf ファイル公開:2018/01/23 (680.2 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2017-04-17
タイトル
タイトル Absolute density of precursor SiH3 radicals and H atoms in H2-diluted SiH4 gas plasma for deposition of microcrystalline silicon films
言語 en
著者 Abe, Yusuke

× Abe, Yusuke

WEKO 70670

en Abe, Yusuke

Search repository
Ishikawa, Kenji

× Ishikawa, Kenji

WEKO 70671

en Ishikawa, Kenji

Search repository
Takeda, Keigo

× Takeda, Keigo

WEKO 70672

en Takeda, Keigo

Search repository
Tsutsumi, Takayoshi

× Tsutsumi, Takayoshi

WEKO 70673

en Tsutsumi, Takayoshi

Search repository
Fukushima, Atsushi

× Fukushima, Atsushi

WEKO 70674

en Fukushima, Atsushi

Search repository
Kondo, Hiroki

× Kondo, Hiroki

WEKO 70675

en Kondo, Hiroki

Search repository
Sekine, Makoto

× Sekine, Makoto

WEKO 70676

en Sekine, Makoto

Search repository
Hori, Masaru

× Hori, Masaru

WEKO 70677

en Hori, Masaru

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright 2017 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Applied Physics Letters. v.110, n.4, 2017, p.043902) and may be found at (http://dx.doi.org/10.1063/1.4974821).
抄録
内容記述 Microcrystalline hydrogenated silicon films were produced at a high deposition rate of about 2 nm/s by using a capacitively coupled plasma under a practical pressure of around 1 kPa. The SiH4 source gas was almost fully dissociated when highly diluted with H2 gas, and the dominant species in the gas phase were found to be SiH3 radicals, which are film-growth precursors, and H atoms. The absolute density of these species was measured as the partial pressure of SiH4 gas was varied. With the increasing SiH4 gas flow rate, the SiH3 radical density, which was on the order of 1012 cm−3, increased linearly, while the H-atom density remained constant at about 1012 cm−3. The film growth mechanism was described in terms of precursors, based on the measured flux of SiH3 radicals and H atoms, and the relative fraction of higher-order radicals.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 AIP Publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.4974821
ISSN
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : Applied Physics Letters

巻 110, 号 4, p. 043902-043902, 発行日 2017-01-23
著者版フラグ
値 publisher
URI
識別子 http://dx.doi.org/10.1063/1.4974821
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/25986
識別子タイプ HDL
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