{"created":"2021-03-01T06:32:01.854191+00:00","id":24117,"links":{},"metadata":{"_buckets":{"deposit":"be353a14-729f-410c-85b1-3295e29d5108"},"_deposit":{"id":"24117","owners":[],"pid":{"revision_id":0,"type":"depid","value":"24117"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00024117","sets":["320:321:322"]},"author_link":["71530","71531","71532","71533"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-07","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7S2","bibliographicPageEnd":"07LD07","bibliographicPageStart":"07LD07","bibliographicVolumeNumber":"55","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The primary dissociation channels of SiH4 were investigated using computational chemistry. The results showed properties very similar to those of CH4. The main dissociation product was SiH2 and the second dissociation product was SiH3. SiH was produced through SiH3 to SiH + H2 dissociation by electronic excitation. H abstraction reactions by H and SiH3 were also calculated for SiH4, Si2H6, Si3H8, and Si9H14(100) cluster models. The energy barriers of H abstraction reactions were lower than those of SiH3 abstraction reactions. This result is considerably important for deposition in SiH4/H2 process plasma.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"https://doi.org/10.7567/JJAP.55.07LD07"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/26333"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/JJAP.55.07LD07","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2016 The Japan Society of Applied Physics","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-4922","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hayashi, Toshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"71530","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ishikawa, Kenji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"71531","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sekine, Makoto","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"71532","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hori, Masaru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"71533","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-07-01"}],"displaytype":"detail","filename":"Preprint_of_JJApRegular_Papers_2014_55_7_07LD07.pdf","filesize":[{"value":"1.0 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Preprint_of_JJApRegular_Papers_2014_55_7_07LD07.pdf ファイル公開：2017/07/01","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/24117/files/Preprint_of_JJApRegular_Papers_2014_55_7_07LD07.pdf"},"version_id":"783f7123-0439-48d2-943e-3ec08debe679"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Computational study on SiH4 dissociation channels and H abstraction reactions","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Computational study on SiH4 dissociation channels and H abstraction reactions","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2017-05-17"},"publish_date":"2017-05-17","publish_status":"0","recid":"24117","relation_version_is_last":true,"title":["Computational study on SiH4 dissociation channels and H abstraction reactions"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:14:10.477535+00:00"}