@article{oai:nagoya.repo.nii.ac.jp:00024731,
 author = {Thendie, Boanerges and Omachi, Haruka and Hirotani, Jun and Ohno, Yutaka and Miyata, Yasumitsu and Shinohara, Hisanori},
 issue = {6},
 journal = {Japanese Journal of Applied Physics},
 month = {Jun},
 note = {Large-diameter semiconductor single-wall carbon nanotubes (s-SWCNTs) have superior mobility and conductivity to small-diameter s-SWCNTs. However, the purification of s-SWCNTs with diameters larger than 1.6 nm by gel filtration has been difficult owing to the low selectivity of the conventional purification method in these large-diameter regions. We report a combination of temperature-controlled gel filtration and the gradient elution technique that we developed to enrich a high-purity s-SWCNT with a diameter as large as 1.9 nm. The thin-film transistor (TFT) device using the 1.9-nm-diameter SWCNT shows an average channel mobility of 23.7 cm2V^−1s^−1, which is much higher than those of conventional SWCNT-TFTs with smaller-diameters of 1.5 and 1.4 nm.},
 pages = {065102--065102},
 title = {Purification of 1.9-nm-diameter semiconducting single-wall carbon nanotubes by temperature-controlled gel-column chromatography and its application to thin-film transistor devices},
 volume = {56},
 year = {2017}
}