{"created":"2021-03-01T06:32:42.349279+00:00","id":24731,"links":{},"metadata":{"_buckets":{"deposit":"c8fa7a0c-8843-48d9-b0bf-d8594a95067f"},"_deposit":{"id":"24731","owners":[],"pid":{"revision_id":0,"type":"depid","value":"24731"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00024731","sets":["336:695:696"]},"author_link":["73403","73404","73405","73406","73407","73408"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-06","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"065102","bibliographicPageStart":"065102","bibliographicVolumeNumber":"56","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Large-diameter semiconductor single-wall carbon nanotubes (s-SWCNTs) have superior mobility and conductivity to small-diameter s-SWCNTs. However, the purification of s-SWCNTs with diameters larger than 1.6 nm by gel filtration has been difficult owing to the low selectivity of the conventional purification method in these large-diameter regions. We report a combination of temperature-controlled gel filtration and the gradient elution technique that we developed to enrich a high-purity s-SWCNT with a diameter as large as 1.9 nm. The thin-film transistor (TFT) device using the 1.9-nm-diameter SWCNT shows an average channel mobility of 23.7 cm2V^−1s^−1, which is much higher than those of conventional SWCNT-TFTs with smaller-diameters of 1.5 and 1.4 nm.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"https://doi.org/10.7567/JJAP.56.065102"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/26953"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/JJAP.56.065102","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2017 The Japan Society of Applied Physics","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-4922","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Thendie, Boanerges","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"73403","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Omachi, Haruka","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"73404","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hirotani, Jun","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"73405","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohno, Yutaka","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"73406","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Miyata, Yasumitsu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"73407","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinohara, Hisanori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"73408","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-06-01"}],"displaytype":"detail","filename":"JJApRe-revised_Ms_March_3rd_2017.pdf","filesize":[{"value":"1.9 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JJApRe-revised_Ms_March_3rd_2017.pdf ファイル公開：2018/06/01","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/24731/files/JJApRe-revised_Ms_March_3rd_2017.pdf"},"version_id":"b25c0cac-0ea7-4b6a-8ab6-f77d65a22dce"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Purification of 1.9-nm-diameter semiconducting single-wall carbon nanotubes by temperature-controlled gel-column chromatography and its application to thin-film transistor devices","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Purification of 1.9-nm-diameter semiconducting single-wall carbon nanotubes by temperature-controlled gel-column chromatography and its application to thin-film transistor devices","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["696"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2017-09-05"},"publish_date":"2017-09-05","publish_status":"0","recid":"24731","relation_version_is_last":true,"title":["Purification of 1.9-nm-diameter semiconducting single-wall carbon nanotubes by temperature-controlled gel-column chromatography and its application to thin-film transistor devices"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:15:13.551372+00:00"}