@article{oai:nagoya.repo.nii.ac.jp:00025715,
 author = {Ike, Shinichi and Takeuchi, Wakana and Nakatsuka, Osamu and Zaima, Shigeaki},
 journal = {Thin Solid Films},
 month = {Jan},
 note = {We report the epitaxy of n-Ge layer with in situ phosphorus (P)-doping using metal-organic chemical vapor deposition (MOCVD) method with tertiary-butyl-germane and tri-ethyl-phosphine precursors. The crystalline and electrical properties of n-Ge epitaxial layers have been investigated using X-ray diffraction, atomic force microscopy, and Hall effect measurements in detail. In situ P-doping with MOCVD demonstrates the incorporation of P in Ge as high as 1 × 10^20 cm^−3. The electron concentration in P-doped Ge epitaxial layers are achieved as high as 1.7 × 10^19, 1.8 × 10^19, and 2.2 × 10^18 cm^−3 at growth temperatures of 400, 350, 320 °C, respectively., ファイル公開日: 2020/01/01},
 pages = {57--63},
 title = {Epitaxial growth of heavily doped  n^+ -Ge layers using metal-organic chemical vapor deposition with  in situ  phosphorus doping},
 volume = {645},
 year = {2018}
}