{"created":"2021-03-01T06:33:45.711300+00:00","id":25715,"links":{},"metadata":{"_buckets":{"deposit":"f3c5908f-9c06-4e58-9c9f-0ad3883ca427"},"_deposit":{"id":"25715","owners":[],"pid":{"revision_id":0,"type":"depid","value":"25715"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00025715","sets":["320:321:322"]},"author_link":["76190","76191","76192","76193"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-01-01","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"63","bibliographicPageStart":"57","bibliographicVolumeNumber":"645","bibliographic_titles":[{"bibliographic_title":"Thin Solid Films","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We report the epitaxy of n-Ge layer with in situ phosphorus (P)-doping using metal-organic chemical vapor deposition (MOCVD) method with tertiary-butyl-germane and tri-ethyl-phosphine precursors. The crystalline and electrical properties of n-Ge epitaxial layers have been investigated using X-ray diffraction, atomic force microscopy, and Hall effect measurements in detail. In situ P-doping with MOCVD demonstrates the incorporation of P in Ge as high as 1 × 10^20 cm^−3. The electron concentration in P-doped Ge epitaxial layers are achieved as high as 1.7 × 10^19, 1.8 × 10^19, and 2.2 × 10^18 cm^−3 at growth temperatures of 400, 350, 320 °C, respectively.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開日: 2020/01/01 ","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.tsf.2017.10.013","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00406090","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ike, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"76190","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeuchi, Wakana","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"76191","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakatsuka, Osamu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"76192","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zaima, Shigeaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"76193","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-01"}],"displaytype":"detail","filename":"TSF-D-17-00324R2.pdf","filesize":[{"value":"1.4 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"TSF-D-17-00324R2","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/25715/files/TSF-D-17-00324R2.pdf"},"version_id":"f6ae0b09-7ccc-4f9f-ba1f-1224c2455781"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Germanium","subitem_subject_scheme":"Other"},{"subitem_subject":"Phosphorus","subitem_subject_scheme":"Other"},{"subitem_subject":"Doping","subitem_subject_scheme":"Other"},{"subitem_subject":"Metal-organic chemical vapor deposition","subitem_subject_scheme":"Other"},{"subitem_subject":"Epitaxial growth","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Epitaxial growth of heavily doped  n^+ -Ge layers using metal-organic chemical vapor deposition with  in situ  phosphorus doping","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Epitaxial growth of heavily doped  n^+ -Ge layers using metal-organic chemical vapor deposition with  in situ  phosphorus doping","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2018-04-18"},"publish_date":"2018-04-18","publish_status":"0","recid":"25715","relation_version_is_last":true,"title":["Epitaxial growth of heavily doped  n^+ -Ge layers using metal-organic chemical vapor deposition with  in situ  phosphorus doping"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:16:24.823425+00:00"}