{"created":"2021-03-01T06:34:02.170170+00:00","id":26139,"links":{},"metadata":{"_buckets":{"deposit":"4eee5ad8-0160-4e70-b22d-94062ff7155a"},"_deposit":{"id":"26139","owners":[],"pid":{"revision_id":0,"type":"depid","value":"26139"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00026139","sets":["673:674:675"]},"author_link":["78416","78417","78418","78419","78420"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-03-21","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageStart":"113903","bibliographicVolumeNumber":"123","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Giant magneto-resistance (GMR) spin-valve films with an FeSiB/CoFeB free layer were fabricated to detect applied strain in a GMR device. The magnetostriction constant of FeSiB was experimentally determined to have 32 ppm, which was one order of magnitude larger than that of CoFeB. In order to detect the strain sensitively and robustly against magnetic field fluctuation, the magnetic field modulation technique was applied to the GMR device. It was confirmed that the output voltage of the GMR device depends on the strain, and the gauge factor K = 46 was obtained by adjusting the applied DC field intensity and direction. We carried out the simulation based on a macro-spin model assuming uniaxial anisotropy, interlayer coupling between the free and pin layers, strain-induced anisotropy, and Zeeman energy, and succeeded in reproducing the experimental results. The simulation predicts that improving the magnetic properties of GMR films, especially reducing interlayer coupling, will be effective for increasing the output, i.e., the gauge factor, of the GMR strain sensors.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2019-03-21 ","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.5018467","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Journal of Applied Physics. v.123, 2018, p.113903) and may be found at (https://doi.org/10.1063/1.5018467). ","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hashimoto, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"78416","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamamoto, N.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"78417","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kato, T.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"78418","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Oshima, D.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"78419","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Iwata, S.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"78420","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-03-21"}],"displaytype":"detail","filename":"1_5018467.pdf","filesize":[{"value":"1.9 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"1_5018467","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/26139/files/1_5018467.pdf"},"version_id":"6b0cd59e-fd34-4c43-9e39-11e13ad8ed52"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Spin-valve giant magneto-resistance film with magnetostrictive FeSiB amorphous layer and its application to strain sensors","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Spin-valve giant magneto-resistance film with magnetostrictive FeSiB amorphous layer and its application to strain sensors","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2018-07-04"},"publish_date":"2018-07-04","publish_status":"0","recid":"26139","relation_version_is_last":true,"title":["Spin-valve giant magneto-resistance film with magnetostrictive FeSiB amorphous layer and its application to strain sensors"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:45:41.162738+00:00"}