@article{oai:nagoya.repo.nii.ac.jp:00026225,
 author = {Okada, Mitsuhiro and Kutana, Alex and Kureishi, Yusuke and Kobayashi, Yu and Saito, Yuika and Saito, Tetsuki and Watanabe, Kenji and Taniguchi, Takashi and Gupta, Sunny and Miyata, Yasumitsu and Yakobson, Boris I. and Shinohara, Hisanori and Kitaura, Ryo},
 issue = {3},
 journal = {ACS Nano},
 month = {Mar},
 note = {A van der Waals (vdW) heterostructure composed of multivalley systems can show excitonic optical responses from interlayer excitons that originate from several valleys in the electronic structure. In this work, we studied photoluminescence (PL) from a vdW heterostructure, WS2/MoS2, deposited on hexagonal boron nitride (hBN) flakes. PL spectra from the fabricated heterostructures observed at room temperature show PL peaks at 1.3–1.7 eV, which are absent in the PL spectra of WS2 or MoS2 monolayers alone. The low-energy PL peaks we observed can be decomposed into three distinct peaks. Through detailed PL measurements and theoretical analysis, including PL imaging, time-resolved PL measurements, and calculation of dielectric function ε(ω) by solving the Bethe–Salpeter equation with G0W0, we concluded that the three PL peaks originate from direct K–K interlayer excitons, indirect Q−Γ interlayer excitons, and indirect K−Γ interlayer excitons., ファイル公開：2019-03-27},
 pages = {2498--2505},
 title = {Direct and Indirect Interlayer Excitons in a van der Waals Heterostructure of hBN/WS2/MoS2/hBN},
 volume = {12},
 year = {2018}
}