@article{oai:nagoya.repo.nii.ac.jp:00026313,
 author = {Yang, Xu and Nitta, Shugo and Pristovsek, Markus and Liu, Yuhuai and Nagamatsu, Kentaro and Kushimoto, Maki and Honda, Yoshio and Amano, Hiroshi},
 issue = {5},
 journal = {Applied Physics Express},
 month = {May},
 note = {Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures., ファイル公開：2019/05/01},
 title = {Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy},
 volume = {11},
 year = {2018}
}