{"created":"2021-03-01T06:34:13.664065+00:00","id":26313,"links":{},"metadata":{"_buckets":{"deposit":"fc864aa1-5cc1-4509-8381-eedd5f4389ee"},"_deposit":{"id":"26313","owners":[],"pid":{"revision_id":0,"type":"depid","value":"26313"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00026313","sets":["673:674:675"]},"author_link":["79277","79278","79279","79280","79281","79282","79283","79284"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageStart":"051002","bibliographicVolumeNumber":"11","bibliographic_titles":[{"bibliographic_title":"Applied Physics Express","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2019/05/01","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/APEX.11.051002","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2018 The Japan Society of Applied Physics","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1882-0778","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yang, Xu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79277","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nitta, Shugo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79278","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Pristovsek, Markus","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79279","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Liu, Yuhuai","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79280","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nagamatsu, Kentaro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79281","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kushimoto, Maki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79282","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Honda, Yoshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79283","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Amano, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79284","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-05-01"}],"displaytype":"detail","filename":"Yang_APEX_11_5_051002.pdf","filesize":[{"value":"424.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Yang_APEX_11_5_051002","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/26313/files/Yang_APEX_11_5_051002.pdf"},"version_id":"597e838a-e9f0-4336-aa93-1fd08c670e91"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2018-08-20"},"publish_date":"2018-08-20","publish_status":"0","recid":"26313","relation_version_is_last":true,"title":["Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:33:46.067684+00:00"}