{"_buckets": {"deposit": "c27743ac-611c-4d8a-a8e5-055a2efc61c2"}, "_deposit": {"id": "26314", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "26314"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00026314", "sets": ["675"]}, "author_link": ["79285", "79286", "79287", "79288", "79289", "79290", "79291", "79292", "79293", "79294"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2018-05-09", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "9", "bibliographicPageStart": "1700645", "bibliographicVolumeNumber": "215", "bibliographic_titles": [{"bibliographic_title": "physica status solidi (a)", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "In this study, GaN m‐plane Schottky barrier diodes are fabricated by metalorganic vapor‐phase epitaxy (MOVPE) on several off‐angle gallium nitride (GaN) substrates, and the off‐cut angle dependence of impurity incorporation is investigated. We show that the MOVPE layer on the substrate inclined 5° toward the [000–1] direction has extremely low impurity incorporation. These results provide important suggestions for the fabrication of m‐plane power devices.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "ファイル公開：2019-05-09", "subitem_description_language": "ja", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Wiley", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1002/pssa.201700645", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "This is the peer reviewed version of the following article: [Tanaka, A. , Ando, Y. , Nagamatsu, K. , Deki, M. , Cheong, H. , Ousmane, B. , Kushimoto, M. , Nitta, S. , Honda, Y. and Amano, H. (2018), m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates. Phys. Status Solidi A, 215: 1700645. doi:10.1002/pssa.201700645], which has been published in final form at [https://doi.org/10.1002/pssa.201700645]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1862-6300", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Tanaka, Atsushi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79285", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ando, Yuto", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79286", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nagamatsu, Kentaro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79287", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Deki, Manato", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79288", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Cheong, Heajeong", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79289", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ousmane, Barry", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79290", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kushimoto, Maki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79291", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nitta, Shugo", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79292", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Honda, Yoshio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79293", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79294", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-05-09"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Tanaka_PSSA_215_9_1700645.pdf", "filesize": [{"value": "436.4 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 436400.0, "url": {"label": "Tanaka_PSSA_215_9_1700645", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/26314/files/Tanaka_PSSA_215_9_1700645.pdf"}, "version_id": "94eaa945-c0f6-41b4-9c76-795ad5f1f286"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "GaN", "subitem_subject_scheme": "Other"}, {"subitem_subject": "m-plane", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Schottky barrier diode", "subitem_subject_scheme": "Other"}, {"subitem_subject": "facet", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["675"], "permalink_uri": "http://hdl.handle.net/2237/00028517", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2018-08-20"}, "publish_date": "2018-08-20", "publish_status": "0", "recid": "26314", "relation": {}, "relation_version_is_last": true, "title": ["m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates"], "weko_shared_id": -1}