@article{oai:nagoya.repo.nii.ac.jp:00026314,
 author = {Tanaka, Atsushi and Ando, Yuto and Nagamatsu, Kentaro and Deki, Manato and Cheong, Heajeong and Ousmane, Barry and Kushimoto, Maki and Nitta, Shugo and Honda, Yoshio and Amano, Hiroshi},
 issue = {9},
 journal = {physica status solidi (a)},
 month = {May},
 note = {In this study, GaN m‐plane Schottky barrier diodes are fabricated by metalorganic vapor‐phase epitaxy (MOVPE) on several off‐angle gallium nitride (GaN) substrates, and the off‐cut angle dependence of impurity incorporation is investigated. We show that the MOVPE layer on the substrate inclined 5° toward the [000–1] direction has extremely low impurity incorporation. These results provide important suggestions for the fabrication of m‐plane power devices., ファイル公開：2019-05-09},
 title = {m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates},
 volume = {215},
 year = {2018}
}