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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching

http://hdl.handle.net/2237/00028518
http://hdl.handle.net/2237/00028518
85a61ffb-206a-4152-ad2e-4ff3603f4d5a
名前 / ファイル ライセンス アクション
Matsumoto_PSSB_255_5_1700387.pdf Matsumoto_PSSB_255_5_1700387 (913.6 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2018-08-20
タイトル
タイトル Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching
言語 en
著者 Matsumoto, Koji

× Matsumoto, Koji

WEKO 79295

en Matsumoto, Koji

Search repository
Ono, Toshiaki

× Ono, Toshiaki

WEKO 79296

en Ono, Toshiaki

Search repository
Honda, Yoshio

× Honda, Yoshio

WEKO 79297

en Honda, Yoshio

Search repository
Yamamoto, Tetsuya

× Yamamoto, Tetsuya

WEKO 79298

en Yamamoto, Tetsuya

Search repository
Usami, Shigeyoshi

× Usami, Shigeyoshi

WEKO 79299

en Usami, Shigeyoshi

Search repository
Kushimoto, Maki

× Kushimoto, Maki

WEKO 79300

en Kushimoto, Maki

Search repository
Murakami, Satoshi

× Murakami, Satoshi

WEKO 79301

en Murakami, Satoshi

Search repository
Amano, Hiroshi

× Amano, Hiroshi

WEKO 79302

en Amano, Hiroshi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This is the peer reviewed version of the following article: [Matsumoto, K. , Ono, T. , Honda, Y. , Yamamoto, T. , Usami, S. , Kushimoto, M. , Murakami, S. and Amano, H. (2018), Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching. Phys. Status Solidi B, 255: 1700387. doi:10.1002/pssb.201700387], which has been published in final form at [https://doi.org/10.1002/pssb.201700387]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
キーワード
主題Scheme Other
主題 GaN-on-Si
キーワード
主題Scheme Other
主題 threading dislocation
キーワード
主題Scheme Other
主題 in-situ etching
キーワード
主題Scheme Other
主題 nano-pit
抄録
内容記述 A gallium nitride (GaN) epitaxial layer with a low density of threading dislocations is successfully grown on a silicon substrate by using in situ gas etching. Silicon nitride (SiNx) film is used as a mask, and ammonia is intermittently supplied in hydrogen ambient during the etching. After etching, high‐density deep pits appeared on the surface of a GaN template layer and corresponded to the threading dislocations in the layer. In this novel method, before growing an additional GaN layer on the template GaN layer, a second SiNx layer is deposited after the etching process, and this layer prevents GaN nuclei from growing on the upper side‐walls of the pits. By using this method, the density of threading dislocations of the GaN surface is reduced to 6.7 × 10^7 cm^−2. This method is cost effective, completing all the necessary processes in one growth run without taking samples out from a metalorganic chemical vapor deposition (MOCVD) reactor.
言語 en
内容記述タイプ Abstract
内容記述
内容記述 ファイル公開:2019-05-14
言語 ja
内容記述タイプ Other
出版者
言語 en
出版者 Wiley
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1002/pssb.201700387
ISSN
収録物識別子タイプ PISSN
収録物識別子 0370-1972
書誌情報 en : physica status solidi (b)

巻 255, 号 5, p. 1700387, 発行日 2018-05-14
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