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Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching
http://hdl.handle.net/2237/00028518
http://hdl.handle.net/2237/0002851885a61ffb-206a-4152-ad2e-4ff3603f4d5a
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2018-08-20 | |||||
タイトル | ||||||
タイトル | Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching | |||||
言語 | en | |||||
著者 |
Matsumoto, Koji
× Matsumoto, Koji× Ono, Toshiaki× Honda, Yoshio× Yamamoto, Tetsuya× Usami, Shigeyoshi× Kushimoto, Maki× Murakami, Satoshi× Amano, Hiroshi |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | This is the peer reviewed version of the following article: [Matsumoto, K. , Ono, T. , Honda, Y. , Yamamoto, T. , Usami, S. , Kushimoto, M. , Murakami, S. and Amano, H. (2018), Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching. Phys. Status Solidi B, 255: 1700387. doi:10.1002/pssb.201700387], which has been published in final form at [https://doi.org/10.1002/pssb.201700387]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | GaN-on-Si | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | threading dislocation | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | in-situ etching | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | nano-pit | |||||
抄録 | ||||||
内容記述 | A gallium nitride (GaN) epitaxial layer with a low density of threading dislocations is successfully grown on a silicon substrate by using in situ gas etching. Silicon nitride (SiNx) film is used as a mask, and ammonia is intermittently supplied in hydrogen ambient during the etching. After etching, high‐density deep pits appeared on the surface of a GaN template layer and corresponded to the threading dislocations in the layer. In this novel method, before growing an additional GaN layer on the template GaN layer, a second SiNx layer is deposited after the etching process, and this layer prevents GaN nuclei from growing on the upper side‐walls of the pits. By using this method, the density of threading dislocations of the GaN surface is reduced to 6.7 × 10^7 cm^−2. This method is cost effective, completing all the necessary processes in one growth run without taking samples out from a metalorganic chemical vapor deposition (MOCVD) reactor. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
内容記述 | ||||||
内容記述 | ファイル公開:2019-05-14 | |||||
言語 | ja | |||||
内容記述タイプ | Other | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Wiley | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1002/pssb.201700387 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0370-1972 | |||||
書誌情報 |
en : physica status solidi (b) 巻 255, 号 5, p. 1700387, 発行日 2018-05-14 |
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著者版フラグ | ||||||
値 | author |